Invention Grant
- Patent Title: Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same
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Application No.: US15442592Application Date: 2017-02-24
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Publication No.: US10854591B2Publication Date: 2020-12-01
- Inventor: Wei-E Wang , Titash Rakshit , Borna J. Obradovic , Chris Bowen , Mark S. Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/66 ; H01L23/522 ; H01L27/02 ; H01L21/8238 ; H01L21/822 ; H01L21/02 ; H01L21/28 ; H01L21/311 ; H01L21/768 ; H01L21/84 ; H01L23/528 ; H01L23/532 ; H01L27/06 ; H01L27/092 ; H01L29/04 ; H01L29/16 ; H01L29/47 ; H01L29/66
Abstract:
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is M3 or higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include polycrystalline silicon. The upper metal routing layer M3 or higher may include cobalt.
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