- 专利标题： Semiconductor device with fin end spacer dummy gate and method of manufacturing the same
-
申请号： US16104692申请日： 2018-08-17
-
公开(公告)号： US10797174B2公开(公告)日： 2020-10-06
- 发明人: Kai-Tai Chang , Tung Ying Lee , Wei-Sheng Yun , Tzu-Chung Wang , Chia-Cheng Ho , Ming-Shiang Lin , Tzu-Chiang Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L21/762 ; H01L21/768 ; H01L21/8238 ; H01L21/033 ; H01L21/02 ; H01L23/532
摘要：
A semiconductor device includes a plurality of fins on a substrate. A fin liner is formed on an end surface of each of the plurality of fins. An insulating layer is formed on the plurality of fins. A plurality of polycrystalline silicon layers are formed on the insulating layer. A source/drain epitaxial layer is formed in a source/drain space in each of the plurality of fins. One of the polycrystalline silicon layers is formed on a region spaced-apart from the fins.
公开/授权文献
信息查询
IPC分类:
