- 专利标题： Silicon carbide semiconductor device and manufacturing method therefor
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申请号： US16305164申请日： 2017-06-29
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公开(公告)号： US10784335B2公开(公告)日： 2020-09-22
- 发明人: Yuichi Takeuchi , Shinichiro Miyahara , Atsuya Akiba , Katsumi Suzuki , Yukihiko Watanabe
- 申请人： DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
- 申请人地址： JP Kariya JP Toyota-shi
- 专利权人： DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Kariya JP Toyota-shi
- 代理机构： Posz Law Group, PLC
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@28acc675
- 国际申请： PCT/JP2017/023987 WO 20170629
- 国际公布： WO2018/008526 WO 20180111
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L29/78 ; H01L29/872 ; H01L29/47 ; H01L29/12 ; H01L21/04 ; H01L29/739
摘要：
A top end of the p type connection layer is connected to the p type extension region. By forming such a p type extension region, it becomes possible to eliminate a region where an interval becomes large between the p type connection layer and the p type guard ring. Therefore, in the mesa portion, it is possible to prevent the equipotential line from excessively rising up, and it is possible to secure the withstand voltage.
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