- 专利标题: Spin-orbit torque MRAMs and method for fabricating the same
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申请号: US16055000申请日: 2018-08-03
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公开(公告)号: US10546622B2公开(公告)日: 2020-01-28
- 发明人: Yu-Sheng Chen , I-Jung Wang
- 申请人: Industrial Technology Research Institute
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 优先权: TW106141350A 20171128
- 主分类号: H01L29/82
- IPC分类号: H01L29/82 ; G11C11/16 ; H01L43/04 ; H01L43/14 ; H01L43/08 ; H01L43/10 ; H01L43/06 ; H01L43/12 ; G11C11/18
摘要:
A spin-orbit torque MRAM is provided. The spin-orbit torque MRAM includes a spin Hall metal layer, a free magnetic layer disposed on the spin Hall metal layer, a barrier layer, and a pinned layer. The free magnetic layer includes a first area and a second area located on both sides thereof. The barrier layer includes a first area and a second area located on both sides thereof. The first area of the barrier layer is disposed on that of the free magnetic layer, and the second area of the barrier layer is disposed on that of the free magnetic layer. The pinned layer is disposed on the first area of the barrier layer.
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