- 专利标题: Apparatuses and methods for providing internal memory commands and control signals in semiconductor memories
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申请号: US16138517申请日: 2018-09-21
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公开(公告)号: US10534394B2公开(公告)日: 2020-01-14
- 发明人: Hyun Yoo Lee , Jongtae Kwak , Suryanarayana Tatapudi
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: G06F1/06
- IPC分类号: G06F1/06 ; G11C11/4076 ; G11C11/4096 ; G11C11/4093 ; G11C7/00 ; G11C7/10 ; G11C19/00 ; G11C7/22 ; G11C11/408 ; G06F1/12
摘要:
In an example apparatus, a command path receives read commands and provides respective control signals for each read command. The command path is configured to provide initial control signals for an initial read command responsive to a first clock edge of a clock signal of a plurality of multiphase clock signals and to further provide respective control signals for subsequent read commands responsive to receipt of the subsequent mad commands. The example apparatus further includes a read data output circuit configured to receive the control signals from the command path and further receive read data in parallel. The read data output circuit is configured to provide the read data serially responsive to the control signals.
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