Invention Grant
- Patent Title: Nonvolatile memory device and operating method of nonvolatile memory device
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Application No.: US15936696Application Date: 2018-03-27
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Publication No.: US10431300B2Publication Date: 2019-10-01
- Inventor: Suk-Soo Pyo , Hyuntaek Jung , Taejoong Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0102540 20170811
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C29/50 ; G11C11/16 ; G11C5/14 ; G11C29/02 ; G11C7/14 ; G11C8/08 ; G11C7/22

Abstract:
A memory device includes a delay locked loop that generates a first code for delaying a reference clock in a first operation mode that is a normal operation mode, generates a second code for delaying the reference clock in a second operation mode that is a refresh mode, and delays the reference clock in response to one of the first and second codes depending on one of the first and second operation modes, and a data output circuit that outputs a data strobe signal (DQS) using the delayed reference clock.
Public/Granted literature
- US20190051351A1 NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY DEVICE Public/Granted day:2019-02-14
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