A semiconductor device 100 includes a semiconductor element 12 having an electrode on a front surface, a wire 15 bonded to the electrode of the semiconductor element 12, a resin layer 22b covering a bonding portion of the wire 15 on the front surface of the semiconductor element 12, and a gel filler material 23 that seals the semiconductor element 12, the wire 15, and the resin layer 22b. By protecting the bonding portion of the wire 15 with the resin layer 22b, degradation of the wire 15 is ameliorated and the reliability of the semiconductor device 100 is improved.