- 专利标题： Flash memory system using negative high voltage level shifter
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申请号： US16218398申请日： 2018-12-12
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公开(公告)号： US10325666B2公开(公告)日： 2019-06-18
- 发明人: Hieu Van Tran , Anh Ly , Thuan Vu , Hung Quoc Nguyen
- 申请人： Silicon Storage Technology, Inc.
- 申请人地址： US CA San Jose
- 专利权人： SILICON STORAGE TECHNOLOGY, INC.
- 当前专利权人： SILICON STORAGE TECHNOLOGY, INC.
- 当前专利权人地址： US CA San Jose
- 代理机构： DLA Piper LLP US
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C16/30 ; G11C16/08 ; G11C16/04 ; G11C16/14 ; H01L27/11521 ; G11C16/26 ; G11C5/14 ; G11C16/10 ; G11C8/08 ; G11C16/16
摘要：
During a program, read, or erase operation of one or more non-volatile flash memory cells in an array of non-volatile flash memory cells, a negative voltage can be applied to the word lines and/or coupling gates of the selected or unselected non-volatile flash memory cells. The negative voltage is generated by a negative high voltage level shifter using one of several embodiments disclosed herein.
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