Invention Grant
- Patent Title: Semiconductor devices and methods of fabricating the same
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Application No.: US15334469Application Date: 2016-10-26
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Publication No.: US10211091B2Publication Date: 2019-02-19
- Inventor: Myeong-Dong Lee , Keunnam Kim , Dongryul Lee , Minseong Choi , Jimin Choi , Yong Kwan Kim , Changhyun Cho , Yoosang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0154001 20151103
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; H01L23/532 ; H01L23/535 ; H01L27/108
Abstract:
According to some embodiments, a semiconductor device may include gate structures on a substrate; first and second impurity regions formed in the substrate and at both sides of each of the gate structures; conductive line structures provided to cross the gate structures and connected to the first impurity regions; and contact plugs connected to the second impurity regions, respectively. For each of the conductive line structures, the semiconductor device may include a first air spacer provided on a sidewall of the conductive line structure; a first material spacer provided between the conductive line structure and the first air spacer; and an insulating pattern provided on the air spacer. The insulating pattern may include a first portion and a second portion, and the second portion may have a depth greater than that of the first portion and defines a top surface of the air spacer.
Public/Granted literature
- US20170125283A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2017-05-04
Information query
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