- 专利标题： High current, low switching loss SiC power module
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申请号： US15077329申请日： 2016-03-22
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公开(公告)号： US10141302B2公开(公告)日： 2018-11-27
- 发明人: Mrinal K. Das , Henry Lin , Marcelo Schupbach , John Williams Palmour
- 申请人： Cree, Inc.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理商 Anthony J. Josephson
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/04 ; H01L25/07 ; H01L25/18 ; H01L29/16 ; H01L29/78 ; H05K7/14 ; H02P7/03 ; H02M7/5387 ; H02M7/00 ; H01L23/00 ; H01L29/66 ; H01L29/739 ; H01L29/872
摘要：
A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.
公开/授权文献
- US20160204101A1 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE 公开/授权日：2016-07-14
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