Invention Grant
- Patent Title: Contact structure and extension formation for III-V nFET
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Application No.: US15789972Application Date: 2017-10-21
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Publication No.: US10121703B2Publication Date: 2018-11-06
- Inventor: Veeraraghavan S. Basker , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Daniel P. Morris
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L21/324 ; H01L21/265 ; H01L21/02 ; H01L29/08 ; H01L21/8252 ; H01L29/20 ; H01L27/088 ; H01L21/225 ; H01L29/417 ; H01L21/322 ; H01L21/8258
Abstract:
FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the III-V fin structures to form n-type junctions. Leakage through the substrate is addressed by forming p-n junctions adjoining the source/drain regions and isolating the III-V fin structures under the channel regions.
Public/Granted literature
- US20180061968A1 CONTACT STRUCTURE AND EXTENSION FORMATION FOR III-V NFET Public/Granted day:2018-03-01
Information query
IPC分类:
