- 专利标题: Interdigitated back contact heterojunction photovoltaic device
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申请号: US14946495申请日: 2015-11-19
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公开(公告)号: US10043935B2公开(公告)日: 2018-08-07
- 发明人: Tze-Chiang Chen , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号: H01L31/0216
- IPC分类号: H01L31/0216 ; H01L31/0224 ; H01L31/068 ; H01L31/0747 ; H01L31/18 ; H01L31/077
摘要:
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.
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