Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US15641236Application Date: 2017-07-04
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Publication No.: US10043807B1Publication Date: 2018-08-07
- Inventor: Rung-Yuan Lee , Yu-Cheng Tung , Chun-Tsen Lu , En-Chiuan Liou , Kuan-Hung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW106117128A 20170524
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/00 ; H01L29/00 ; H01L27/092 ; H01L27/02 ; H01L29/08 ; H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L21/8234 ; H01L21/02
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a plural fin structures, two gates, a protection layer and an interlayer dielectric layer. The fin structures are disposed on a substrate. The two gates are disposed on the substrate across the fin structures. The protection layer is disposed on the substrate, surrounded sidewalls of the two gates. The interlayer dielectric layer is disposed on the substrate, covering the fin structures and the two gates.
Information query
IPC分类:
