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发明公开
CN110660667A IGBT制作方法及IGBT 审中-实审

IGBT制作方法及IGBT
摘要：
本发明公开了一种IGBT制作方法及IGBT。其中，所述IGBT为平面型IGBT或沟槽型IGBT，所述IGBT制作方法包括：制作IGBT的正面结构，其中，包括在硅中掺杂第一离子以形成p+区，所述第一离子的扩散系数高于硼离子的扩散系数；制作IGBT的背面结构。本发明在制作p+区时，采用掺杂比硼离子扩散系数大的第一离子，如铝离子或镓离子，替代了现有技术中掺杂硼离子，能够在较低温度、较短时间内形成比扩散硼离子的方式更深、更宽、更渐变的PN结，使得制成的IGBT相比于现有的IGBT进一步提升了抗闩锁能力，具有更高的反向击穿电压和更短的存储时间，提高了IGBT的稳定性，并且具有一定的成本优势。
摘要（英）：

The invention discloses an IGBT (Insulated Gate Bipolar Transistor) manufacturing method and an IGBT (Insulated Gate Bipolar Transistor). The IGBT is a planar IGBT or a trench IGBT. The manufacturingmethod of the IGBT comprises the following steps that: the front structure of the IGBT is manufactured, specifically, silicon is doped with first ions, so that p+ regions can be formed, and the diffusion coefficient of the first ions being higher than the diffusion coefficient of boron ions; and the back surface structure of the IGBT is manufactured. According to the IGBT manufacturing method andthe IGBT of the invention, the silicon is doped with the first ions with the diffusion coefficient larger than that of the boron ions, wherein the first ions can be aluminum ions or gallium ions; thedoping of boron ions in the prior art can be replaced; a PN junction which is deeper, wider and changed more gradually than a PN junction formed by a boron ion diffusion mode can be formed at a lowertemperature in a shorter time; and therefore, compared with an existing IGBT, the manufactured IGBT has the advantages of further improved latch resistance, higher reverse breakdown voltage, shorter storage time, improved stability and low cost.

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