The invention relates to a threshold switch device based on organic and inorganic hybrid perovskite and a preparation method of the threshold switch device, belongs to the field of data storage; the threshold switch device comprises a bottom electrode, a dielectric layer and a top electrode, wherein the top electrode is a silver electrode, the bottom electrode is FTO conductive glass, and the dielectric layer adopts (CsxFAyMA1-x-y)Pb(IzBr1-z)3. The threshold switch device has a high resistance state and a low resistance state. The method comprises the following steps of firstly, dropwise adding a (CsxFAyMA1-x-y)Pb(IzBr1-z)3 solution on the conductive surface of the bottom electrode, starting a glue mixing machine for spin coating, and then dropwise adding anti-solvent chlorobenzene beforethe spin coating is finished, so that the perovskite is rapidly crystallized; secondly, carrying out annealing to obtain a perovskite thin film on the conductive surface; finally, depositing the top electrode on the perovskite thin film, and applying continuous electric pulse stimulation to the silver electrode, so that silver is diffused into the perovskite layer to obtain the threshold switch device. Compared with a traditional threshold switch device, the method disclosed by the invention is carried out in dry air by adopting a low-temperature solution spin-coating process, and a high-temperature process or a high-vacuum or inert environment is not needed, so that the production cost is low, the process is simple, and the method is suitable for large-scale manufacturing.