The invention belongs to the technical field of magneto-optic devices, in particular to an all-solid-state electric field reconfigurable magneto-optic device. An all-solid-state structure is adopted,so that the structure is compatible with a semiconductor technology more easily; an electric field is utilized to manipulate the magneto-optic effect of magnetic film in a nonvolatile mode, and staticpower dissipation of the device is lowered; through the uniformity of ionic migration of an adjustable material layer, consistent manipulation of the magneto-optic effect within the range of severalhundred micron scales is achieved, and the problem that it is hard to scale down filament machine-made devices based on ionic conduction in equal proportion is solved; the adjustable material layer and a magnetic dielectric layer which are separated are adopted, and the purpose that the electric field manipulates the magneto-optic effect of a wide class of magnetic insulators or semiconductors isachieved. According to the all-solid-state electric field reconfigurable magneto-optic device, regarding one device, it is achieved that the structure is in an all solid state, the electric field manipulates the magneto-optic effect in a nonvolatile mode, the magneto-optic effect of the magnetic film is manipulated on a large scale and the magneto-optic effect of multiple magnetic insulators or semiconductors is manipulated in a generalization mode.