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发明公开
CN106469723A 半导体装置及其制造方法 失效 - 权利终止

半导体装置及其制造方法
摘要：
本发明涉及半导体装置及其制造方法，提高半导体装置的性能。在半导体装置中，通过相互相邻的控制栅极电极(15)和存储器栅极电极(13)以及形成于存储器栅极电极(26)下并且在内部具有电荷累积部的绝缘膜(27)来形成存储器单元(MC)。另外，在该半导体装置中，通过下部电极(16)、上部电极(23)以及形成于上部电极(23)与下部电极(16)之间的电容绝缘膜(27a)来形成电容元件(CD1)。下部电极(16)的厚度(TH2)薄于控制栅极电极(15)的厚度(TH1)。(26)、形成于控制栅极电极(15)下的栅极绝缘膜
摘要（英）：

The invention relates to a semiconductor device and a manufacturing method thereof to improve the performance of the semiconductor device. In a semiconductor device, a memory cell is formed of a control gate electrode (15) and a memory gate electrode (26) adjacent to each other, a gate insulating film (13) formed below the control gate electrode (15) and an insulating film (27) formed below the memory gate electrode (26) and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element (CD1) is formed of a lower electrode (16), an upper electrode (23) and a capacitive insulating film (27a) formed between the upper electrode (23) and the lower electrode (16). A thickness (TH2) of the lower electrode (16) is smaller than a thickness (TH1) of the control gate electrode (15).

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