The invention discloses a beta-ray scintillator detector based on a silicon carbide PIN diode structure and a manufacturing method thereof, and mainly solves the problems of low detection rate, integration inconvenience, and bad radiation resistance in the prior art. The silicon carbide PIN diode type beta-ray detector includes, from bottom to top, an N-type ohmic contact electrode (8), an N-type SiC substrate (7), an N-type buffer layer (6), and an intrinsic absorption layer (5). A window is arranged in a center region of the intrinsic absorption layer (5). A plastic scintillator (1) is buried in the window. An SiO2 reflective layer (2) is deposited in a window interior zone and on the window. P<+> thin layers (4) are arranged on two sides of the intrinsic absorption layer (5). P type ohmic contact electrodes (3) are arranged on the P<+> thin layers (4). The beta-ray detector has high detection rate, integration convenience, and good radiation resistance, and can be used for the detection of beta rays in nuclear energy.