The invention relates to a strain Ge groove-type gate CMOS integrated device manufacturing method and a CMOS integrated device thereof. The manufacturing method comprises steps: a SOI substrate is selected; growth of a SiGe layer, a strain Ge layer and a strain Si cap layer is carried out; an etching process is adopted to form an isolation groove; a dry etching process is adopted to form two inverted trapezoidal grooves on a specified NMOS gate area on the surface of an NMOS active area; growth of an oxide layer is carried out on the surfaces of the NMOS active area and a PMOS active area, and a dry etching process is used for etching the oxide layer on part of the surface of the PMOS active area, and a gate dielectric layer of the PMOS is formed; an ion implantation process is adopted to implant P-type ions on the surface of the PMOS active area to form a PMOS source-drain area; growth of a gate material is carried out on the surface of the PMOS gate dielectric layer to form a PMOS gate; growth of a gate material is carried out on the NMOS gate area to form an NMOS gate; and metallization is carried out. The embodiment of the invention adopts the anisotropic dry etching process to etch two inverted trapezoidal grooves, a high-work function material is adopted to serve as the gate of the NMOS, and a strain Ge CMOS device with high performance is realized.