The invention relates to a method for forming contact holes. The method comprises the steps of: forming a wiring layer on a semiconductor substrate which is divided into a device dense area, a device non-dense area and a cutting area; forming a first etching barrier layer and a second etching barrier layer on the wiring layer in sequence; forming an insulating medium layer on the second etching barrier layer; etching the insulating medium layer and the second etching barrier layer to form contact hole patterns, wherein the second etching barrier layer remains in the contact hole patterns in at least one area; etching the remaining second etching barrier layer and the first etching barrier layer along the contact hole patterns to form contact hole opening patterns, and maintaining the thicknesses of the first etching barrier layer remaining in the contact hole opening patterns of the device dense area, the device non-dense area and the cutting area to be the same nearly; and etching and eliminating the first etching barrier layer along the contact hole opening patterns to form contact holes. The depths of the contact holes in each area are the same nearly, a circuit breaking condition is avoided, and the electrical property of semiconductor devices is improved.