This invention provides a silicon carbide semiconductor device which can simultaneously realize stability of withstand voltage at a terminal part for electric field relaxation provided around a cell part driven as a semiconductor element, and reliability in high-temperature operation. In this terminal part, a highly heat-resistant inorganic protective film is provided on the surface on which a well area as a first area provided on a cell part side is exposed, while an organic protective film, which has a high level of insulating properties and is less likely to be influenced by charges, is provided on the surface on which an electric field relaxing region and a silicon carbide layer, which are in contact with the lateral surface of the well region and are distant from the cell part, are exposed.