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发明授权
CN101789366B 分区域激光退火及前馈工艺控制 失效 - 权利终止

分区域激光退火及前馈工艺控制
摘要：
一种方法，包括将半导体晶片划分为多个管芯区域，产生所述半导体晶片的绘图，利用激光对半导体晶片的多个管芯区域的每一个进行扫描，以及基于通过半导体晶片绘图确定的管芯区域数值在扫描过程中对激光的参数进行调整。所述绘图基于在每个管芯区域的第一次测量来表现管芯区域的特性。
摘要（英）：

The invention relates to a field-by-field laser annealing and feed forward process control. A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area.

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