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发明授权
CN101118851B 半导体装置的制造方法 有权

半导体装置的制造方法
摘要：
本发明的目的在于提供一种可以抑制在衬底、基底保护膜、以及结晶硅膜中产生裂缝的结晶硅膜的制造方法、以及半导体装置的制造方法。在热膨胀率为大于6×10-7/℃且38×10-7/℃以下，优选为大于6×10-7/℃且31.8×10-7/℃以下的衬底上形成含有半导体膜的层，加热该层。接着，对被加热了的层照射激光束，使半导体膜结晶化，来形成结晶半导体膜。形成于衬底上的含有半导体膜的层在上述加热后，含有半导体膜的层的总应力为-500N/m以上且+50N/m以下，优选成为-150N/m以上且0N/m以下。
摘要（英）：

It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6x10<-7>/ DEG C. to 38x10<-7>/ DEG C., preferably 6x10<-7>/ DEG C. to 31.8x10<-7>/ DEG C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is -500 N/m to +50 N/m, preferably -150 N/m to 0 N/m after the heating step.

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