The invention provides a semiconductor structure and manufacturing method thereof. The said semiconductor structure comprises (a) substrate; (b) a first semiconductor device on the substrate; (c) N ILD (interstage medium ) layer on the said first semiconductor device, wherein N is more than 1; and (d) conduction line for electrically connecting with the said first semiconductor device. The said conduction line fits for transverse current at the cross direction loaded on the interface surface between the two continual ILD layers parallel with N ILD layer. The conduction line is present in at least two ILD layers of N ILD layer. The said conduction line not comprises conduction via hole of vertical current at the vertical direction loaded on the interface surface.