公开(公告)号：US20250067886A1

公开(公告)日：2025-02-27

申请号：US18452994

申请日：2023-08-21

Applicant: KETEK GmbH Halbleiter-und Reinraumtechnik

Inventor： Lothar Höllt ,  Florian Dams ,  Sabrina Löbner

IPC: G01T1/24 ,  H01L31/115 ,  H01L31/18

Abstract: In an embodiment a method includes providing a semiconductor body with a first main side and an opposite, second main side, wherein the semiconductor body is configured to detect radiation with an energy of at least 10 eV, and wherein the first main side includes a radiation entrance area for the radiation, generating a bottom insulation layer located directly at the first main side, the bottom insulation layer comprising a first electrically insulating material, applying a sacrificial layer directly on the bottom insulation layer across the entrance area so that throughout the entrance area the bottom insulation layer is between the semiconductor body and the sacrificial layer, applying a reinforcing layer over the bottom insulation layer so that the sacrificial layer is sandwiched between the bottom insulation layer and the reinforcing layer, the reinforcing layer comprising a second electrically insulating material and exposing the bottom insulation layer from the sacrificial layer and from the reinforcing layer in the entrance area.

公开(公告)号：US12235397B2

公开(公告)日：2025-02-25

申请号：US17460942

申请日：2021-08-30

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Isao Takasu ,  Atsushi Wada ,  Fumihiko Aiga ,  Kohei Nakayama ,  Yuko Nomura

IPC: G01T1/24 ,  G01T1/20 ,  G01T1/203 ,  H10K30/30 ,  H10K85/10 ,  H10K85/20 ,  C09K11/06 ,  H10K39/00 ,  H10K39/32

Abstract: According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.

公开(公告)号：US20250035800A1

公开(公告)日：2025-01-30

申请号：US18918915

申请日：2024-10-17

Applicant: Waymo LLC

Inventor： Simon Verghese ,  Caner Onal ,  Pierre-Yves Droz

IPC: G01T1/24 ,  G01S17/90 ,  G01T1/20 ,  G01T1/208 ,  G01T1/29

Abstract: The present disclosure relates to devices, systems, and methods relating to configurable silicon photomultiplier (SiPM) devices. An example device includes a substrate and a plurality of single photon avalanche diodes (SPADs) coupled to the substrate. The device also includes a plurality of outputs coupled to the substrate and a plurality of electrical components coupled to the substrate. The plurality of electrical components are configured to selectively connect the plurality of SPADs to the plurality of outputs by selecting which output of the plurality of outputs is connected to each SPAD of the plurality of SPADs and to thereby define a plurality of SiPMs in the device such that each SiPM of the plurality of SiPMs comprises a respective set of one or more SPADs connected to a respective output of the plurality of outputs.

公开(公告)号：US20250012933A1

公开(公告)日：2025-01-09

申请号：US18761069

申请日：2024-07-01

Applicant: CANON KABUSHIKI KAISHA

Inventor： TAKUYA RYU

IPC: G01T1/24 ,  A61B6/00

Abstract: A radiography apparatus includes a plurality of pixels configured to generate image signals that are based on radiation, a voltage conversion circuit configured to convert an input voltage and output the converted voltage, a first battery configured to output a voltage, and a power control unit configured to supply either of the voltage output by the voltage conversion circuit and the voltage output by the first battery as a source voltage, depending on an operating state of the radiography apparatus.

公开(公告)号：US20250004148A1

公开(公告)日：2025-01-02

申请号：US18663077

申请日：2024-05-14

Applicant: InnoCare Optoelectronics Corporation

Inventor： Hui-Hsin Lu ,  Zong-Yi Hsiao ,  Jheng-You Lin ,  Hsin-Han Shen

IPC: G01T1/24

Abstract: Disclosed is a pixel sensor circuit including a photodiode element and a transistor element. The photodiode element is configured to sense an X-ray to generate a photocurrent signal. The photodiode element has a first end and a second end. A bias voltage is applied to the first end of the photodiode element. The transistor element is coupled to the second end of the photodiode element. The transistor element is configured to control the photocurrent signal to be read out. The voltage value of the bias voltage is adjusted according to the intensity of the X-ray.

公开(公告)号：US20240418878A1

公开(公告)日：2024-12-19

申请号：US18702725

申请日：2022-10-19

Applicant: The Regents of the University of California

Inventor： Javier Caravaca Rodriguez ,  Youngho Seo

IPC: G01T1/29 ,  G01T1/24

Abstract: Gamma cameras are provided. The subject gamma cameras include an analysis region comprising a spatial area configured to receive a sample, a first detector head positioned to receive gamma radiation from the analysis region, the first detector head including a first scatterer and a first absorber parallel to the first scatterer, and a second detector head positioned on the opposite side of the analysis region relative to the first detector head, the second detector head including a second scatterer and a second absorber parallel to the second scatterer. Systems and methods for practicing the invention are also provided.

公开(公告)号：US20240418877A1

公开(公告)日：2024-12-19

申请号：US18612350

申请日：2024-03-21

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof INIEWSKI ,  Michael K. JACKSON ,  Yuxin SONG

IPC: G01T1/24 ,  G01N23/046 ,  G01N23/083

Abstract: Application specific integrated circuits (ASICs) for direct attach radiation detector structures include an array of unit cells including signal processing channel circuitry and data transmission through-substrate vias (TSVs) with reduced cross-talk between the signal processing channel circuitry and the data transmission TSVs.

公开(公告)号：US20240418876A1

公开(公告)日：2024-12-19

申请号：US18748053

申请日：2024-06-19

Applicant: SHANGHAI UNITED IMAGING HEALTHCARE CO., LTD.

Inventor： Jingbo LI ,  Zhen NIE

IPC: G01T1/24

Abstract: Embodiments of the present disclosure provides a photon counting detector. The photon counting detector may include a crystal including a crystal cathode, a support, a conductive layer electrically connected to the crystal cathode, and a compression structure that is connected to the support and presses one side of the conductive layer on at least a portion of a surface of the crystal cathode.

公开(公告)号：US12164070B2

公开(公告)日：2024-12-10

申请号：US17514581

申请日：2021-10-29

Applicant: Thorlabs, Inc.

Inventor： Bill Radtke

IPC: G01T1/24 ,  G01J1/44 ,  G01J11/00 ,  H01L31/02 ,  H01L31/107

Abstract: A photon detection device including: a silicon photomultiplier (SiPM) configured to generate a detected signal when the SiPM absorbs a photon; an amplifier; and a transmission line stub between the SiPM and amplifier input. The SiPM connection is configured to transmit the detected signal to the amplifier and a transmission line stub is also configured to receive the SiPM signal and generate a time-delayed reflected signal back into the amplifier input; wherein the amplifier is configured to amplify a combination of the detected signal and the time-delayed reflected signal. The end of the transmission line stub is terminated with a complex impedance that can simultaneously absorb some components of the SiPM pulse response, and reflect others.

公开(公告)号：US20240387065A1

公开(公告)日：2024-11-21

申请号：US18780273

申请日：2024-07-22

Applicant: Westinghouse Electric Company LLC

Inventor： Michael D. Heibel ,  Jeffrey L. Arndt

IPC: G21C17/04 ,  G01T1/24 ,  G21C17/10 ,  H01L31/10 ,  H01L31/115

Abstract: A method for detecting a leak in a cladding tube in a nuclear reactor is described. The method is well-suited for use in a reactor having a plurality of cladding tubes housed in a plurality of linearly arranged channels for flowing coolant past the cladding tubes. The method includes monitoring the channels for the occurrence of an increase in radiation above a selected base line indicative of the presence of at least one fission product in the coolant in at least one of the plurality of channels, and monitoring the channels for the occurrence of time dependent changes in the strength of radiation in the coolant above the base line along the length of the at least one of the plurality of channels. The leak location is calculated by triangulating the radiation readings from a fixed linear array of detectors positioned adjacent to the channels to determine the location of the strongest radiation reading and the location along the length of the channel where the increase in radiation occurred.