In an embodiment a method includes providing a semiconductor body with a first main side and an opposite, second main side, wherein the semiconductor body is configured to detect radiation with an energy of at least 10 eV, and wherein the first main side includes a radiation entrance area for the radiation, generating a bottom insulation layer located directly at the first main side, the bottom insulation layer comprising a first electrically insulating material, applying a sacrificial layer directly on the bottom insulation layer across the entrance area so that throughout the entrance area the bottom insulation layer is between the semiconductor body and the sacrificial layer, applying a reinforcing layer over the bottom insulation layer so that the sacrificial layer is sandwiched between the bottom insulation layer and the reinforcing layer, the reinforcing layer comprising a second electrically insulating material and exposing the bottom insulation layer from the sacrificial layer and from the reinforcing layer in the entrance area.