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公开(公告)号:US20240359267A1
公开(公告)日:2024-10-31
申请号:US18291121
申请日:2022-07-21
发明人: Brandon CHALIFOUX , Ian ARNOLD , Kevin LAVERTY
IPC分类号: B23K26/50 , B23K26/0622 , B23K26/08 , B23K103/00 , G01L5/16
CPC分类号: B23K26/50 , B23K26/0622 , B23K26/0823 , B23K26/0861 , B23K2103/54 , G01L5/16
摘要: Methods for determining laser pulse positions for shaping an optical element may comprise: determining a stress field for at least a portion of a substrate, wherein the stress field comprises at least three components of stress, wherein the stress field comprises a plurality of stress states for the at least a portion of the substrate; determining, based at least on the stress field and a calibration model, a spot density over the at least a portion of the substrate; determining, based on the spot density, a laser spot position allocation that arranges a number of laser pulses into a minimum number of lines that achieves the spot density; and causing, based on the laser spot position allocation, output of a machine program that coordinates a rotation stage, beam shaping, a translation stage, and a laser firing parameter for surface shaping of the at least a portion of the substrate.
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公开(公告)号:US12103790B2
公开(公告)日:2024-10-01
申请号:US17149103
申请日:2021-01-14
CPC分类号: B65G51/03 , B23K26/083 , B23K26/50 , B65G49/065 , H01L21/67115 , H01L21/67784
摘要: A flotation conveyance apparatus according to an embodiment conveys a substrate while floating the substrate by ejecting a gas to a lower surface of the substrate. The flotation conveyance apparatus includes an upper plate disposed on the substrate side including a plurality of ejecting ports for ejecting the gas and a lower plate disposed under the upper plate. Flow-paths for supplying the gas to the plurality of ejecting ports are provided on at least one of the upper plate and the lower plate.
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公开(公告)号:US11964340B2
公开(公告)日:2024-04-23
申请号:US17528710
申请日:2021-11-17
申请人: Chongqing Institute of East China Normal University , ROI Optoelectronics Technology CO, LTD. , East China Normal University
发明人: Heping Zeng , Junyi Nan , Mengyun Hu
IPC分类号: B23K26/0622 , B23K26/06 , B23K26/067 , B23K26/324 , B23K26/362 , B23K26/40 , B23K26/50 , B23K26/55 , B23K26/57 , B23K101/40 , B23K103/00
CPC分类号: B23K26/0624 , B23K26/0622 , B23K26/0648 , B23K26/0652 , B23K26/067 , B23K26/324 , B23K26/362 , B23K26/40 , B23K26/50 , B23K26/55 , B23K26/57 , B23K2101/40 , B23K2103/54
摘要: A device for fabricating a quartz microfluidic chip by a femtosecond pulse cluster. The device includes: a femtosecond pulse cluster laser source configured to output a femtosecond pulse cluster; a beam splitting and interference system, configured to split the femtosecond pulse cluster into a plurality of parts, and to converge split parts to form a femtosecond pulse cluster plasma or a femtosecond pulse cluster plasma grating; a sample system configured to move the electronic displacement platform where a quartz glass is placed to control a position where the parts of the femtosecond pulse cluster are converged on the quartz glass; and a hydrofluoric acid immersion system configured to immerse the quartz glass in a diluent hydrofluoric acid solution to remove an ablated part of the quartz glass to form the quartz microfluidic chip.
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公开(公告)号:US20240120713A1
公开(公告)日:2024-04-11
申请号:US18223181
申请日:2023-07-18
CPC分类号: H01S5/4012 , B23K26/50 , H01S5/02423 , H01S5/02453 , H01S5/0612 , H01S5/0622 , H01S5/143 , H01S5/4093 , H01S3/0812 , H01S5/4062 , H01S5/4068
摘要: In various embodiments, cold-start times and performance of wavelength-beam-combining laser resonators are improved via adjustment of the operating wavelengths and/or temperature of beam emitters within the resonators.
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公开(公告)号:US20230071868A1
公开(公告)日:2023-03-09
申请号:US17821347
申请日:2022-08-22
申请人: DISCO CORPORATION
发明人: Yoshiaki SHIMIZU
IPC分类号: H01L21/268 , B23K26/50
摘要: There is provided a diamond wafer dividing method used when the diamond wafer having a front surface along the {100} plane is divided at planned dividing lines along the direction. The dividing method includes a first modified layer forming step of forming a first modified layer at a linear first region along the planned dividing line, inside the diamond wafer, a second modified layer forming step of forming a second modified layer at a linear second region shifted from the first region in the width direction and the thickness direction with respect to the front surface, and a dividing step of dividing the diamond wafer along the planned dividing lines by giving a force to the diamond wafer in which the first modified layer and the second modified layer are formed.
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公开(公告)号:US20220305596A1
公开(公告)日:2022-09-29
申请号:US17526470
申请日:2021-11-15
发明人: Sunjoong GWAK , Suchang RYU
摘要: A worktable for laser processing includes a lower plate, internal blocks, and external blocks. The lower plate includes a first area, a second area surrounding the first area, and a third area surrounding the second area. The internal blocks are disposed on the lower plate in the first area and the external blocks are disposed on the lower plate in the third area. The external blocks surround the internal blocks.
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公开(公告)号:US20220285218A1
公开(公告)日:2022-09-08
申请号:US17194100
申请日:2021-03-05
申请人: SKY TECH INC.
发明人: JING-CHENG LIN , TSUNG-HUA HSIEH
IPC分类号: H01L21/78 , B23K26/50 , B23K26/08 , B23K26/402 , B23K26/16
摘要: The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.
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公开(公告)号:US20220238379A1
公开(公告)日:2022-07-28
申请号:US17648460
申请日:2022-01-20
申请人: DISCO CORPORATION
发明人: Kenji FURUTA
IPC分类号: H01L21/782 , B23K26/50 , H01L21/683
摘要: A wafer dividing method includes forming modified layers which will be starting points of division, integrally attaching an annular frame and the wafer together through a dicing tape, directing the wafer downward and expanding the dicing tape to divide, into individual device chips, the wafer along the modified layers formed along the streets, counting particles scattered at the time of division of the wafer by a particle counter disposed in a dust collection path set directly below the wafer, and determining, on the basis of the number of the particles, whether or not the modified layers have been properly formed, at the time of carrying out the dividing step.
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公开(公告)号:US11325860B2
公开(公告)日:2022-05-10
申请号:US16583204
申请日:2019-09-25
申请人: Apple Inc.
摘要: A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion.
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公开(公告)号:US20210252635A1
公开(公告)日:2021-08-19
申请号:US17149103
申请日:2021-01-14
摘要: A flotation conveyance apparatus according to an embodiment conveys a substrate while floating the substrate by ejecting a gas to a lower surface of the substrate. The flotation conveyance apparatus includes an upper plate disposed on the substrate side including a plurality of ejecting ports for ejecting the gas and a lower plate disposed under the upper plate. Flow-paths for supplying the gas to the plurality of ejecting ports are provided on at least one of the upper plate and the lower plate.
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