摘要:
A cavity-less vertical semiconductor optical amplifier is provided which includes an active region of an intrinsic bulk semiconductor material sandwiched between p- and n-layers of semiconductor materials in which a vertical gain channel of a predetermined confined cross-sectional configuration is formed to constitute an amplification region of the optical amplifier. The amplification region is sandwiched between layers of p- and n-doped layers of linearly graded semiconductor material supplying holes and electrons to the active region upon switching “ON” of the optical amplifier. Several factors contribute to substantial amplification of an optical signal at a relatively low injection current which include a relatively long active region allowing sufficient single pass gain as well as a strictly confined cross-sectional configuration of the vertical gain channel which reduces the active volume of the amplification region resulting in substantially high gain at a relatively low current. Flattening of the conduction band and valence band profiles allows easy access of the holes and electrons into the active region. The cavity-less vertical semiconductor optical amplifier of the present invention is intended for multidimensional architectural structures for high speed communication.
摘要:
A multistage optical amplifier pumping system with built-in redundant reliability for lightwave communication system provides plural levels of redundancy. A first level of redundancy deals with redundancy in the form of plural primary laser diode sources for pumping a single fiber laser pump source. A second level of redundancy deals with redundancy of a plurality of fiber laser pump sources for pumping a plurality of serially connected injection signal fiber amplifiers forming the multistage amplifier system. If one of fiber pump sources should fail, increased pumping power is available from the remaining fiber pump sources via their respectively connected amplifier stages. A third level of redundancy deals with redundancy in the employment of multiple single mode laser emitters on the same chip or bar sufficiently segmented and/or electrical isolated so as not to interfere with operation of or cause failure to adjacent or neighboring emitters on the same chip or bar.
摘要:
A laser structure may be used to fabricate a plastic laser and achieve electrically-driven lasing action. The structure comprises an LED, a waveguide laser, and a substrate disposed between them. The substrate has a first and a second side. Light emitted from the LED is received by the substrate at the first side and concentrated as it is guided with the body of the substrate to the second side, where it is received by the laser. Concentration of the light across the substrate improves the efficiency of the device and leads to lower threshold powers.
摘要:
A laser system for operation at elevated temperatures with minimal cooling requirements. The laser system comprises a laser media having first and second optical ends and an input port. The laser system further comprises at least one high-temperature laser diode which optically communicates with the laser media and is operative to generate a source beam of light which is transmitted into the input port of the laser media. Optically communicating with the first optical end of the laser media is at least one reflector, while optically communicating with the second optical end of the laser media is at least one optical coupler. The laser media, the reflector and the optical coupler are configured to form a laser resonator operative to generate a laser beam which is transmitted through the optical coupler.