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    TFT array with photo-imageable insulating layer over address lines
    1.
    发明授权
    TFT array with photo-imageable insulating layer over address lines 有权
    TFT阵列，具有地址线上的可光刻绝缘层

    公开(公告)号：US06307215B1

    公开(公告)日：2001-10-23

    申请号：US09357889

    申请日：1999-07-21

    申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

    发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

    IPC分类号： H01L3120

    CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

    摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

    摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

    Isolation of alpha silicon diode sensors through ion implantation
    2.
    发明授权
    Isolation of alpha silicon diode sensors through ion implantation 失效
    通过离子注入隔离α硅二极管传感器

    公开(公告)号：US06759724B2

    公开(公告)日：2004-07-06

    申请号：US10349447

    申请日：2003-01-22

    申请人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

    发明人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

    IPC分类号： H01L3120

    CPC分类号： H01L27/14601 ,  H01L27/14665

    摘要： An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. An amorphous silicon electrode layer is adjacent to the interconnect structure. The amorphous silicon electrode layer includes electrode ion implantation regions between pixel electrode regions. The pixel electrode regions define cathodes of an array of image sensors. The electrode ion implantation regions provide physical isolation between the pixel electrode regions. The cathodes are electrically connected to the interconnect structure. An amorphous silicon I-layer is adjacent to the amorphous silicon electrode layer. The amorphous silicon I-layer forms an inner layer of each of the image sensors. A transparent electrode layer is formed adjacent to the image sensors. An inner surface of the transparent electrode is electrically connected to anodes of the image sensors and the interconnect structure. The amorphous silicon I-layer region can further include I-layer ion implantation regions that provide physical isolation between the inner layers of the image sensors. The I-layer ion implantation regions align with the electrode ion implantation regions. An amorphous silicon P-layer can be formed adjacent to the amorphous silicon I-layer. The amorphous silicon P-layer forms an outer layer of each of the image sensors. The amorphous silicon P-layer region can include P-layer ion implantation regions that provide physical isolation between the outer layers of the image sensors.

    摘要翻译： 图像传感器。 图像传感器阵列包括基板。 在衬底附近形成互连结构。 非晶硅电极层与互连结构相邻。 非晶硅电极层包括像素电极区域之间的电极离子注入区域。 像素电极区域限定图像传感器阵列的阴极。 电极离子注入区域提供像素电极区域之间的物理隔离。 阴极电连接到互连结构。 非晶硅I层与非晶硅电极层相邻。 非晶硅I层形成每个图像传感器的内层。 形成与图像传感器相邻的透明电极层。 透明电极的内表面电连接到图像传感器和互连结构的阳极。 非晶硅I层区域还可以包括在图像传感器的内层之间提供物理隔离的I层离子注入区域。 I层离子注入区域与电极离子注入区域对准。 非晶硅P层可以与非晶硅I层相邻地形成。 非晶硅P层形成每个图像传感器的外层。 非晶硅P层区域可以包括在图像传感器的外层之间提供物理隔离的P层离子注入区域。

    Photovoltaic cell and method of producing that cell
    4.
    发明授权
    Photovoltaic cell and method of producing that cell 失效
    光伏电池及其生产方法

    公开(公告)号：US06309906B1

    公开(公告)日：2001-10-30

    申请号：US09101117

    申请日：1998-06-30

    申请人： Johann Meier ,  Ulrich Kroll

    发明人： Johann Meier ,  Ulrich Kroll

    IPC分类号： H01L3120

    CPC分类号： H01L31/076 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/78675 ,  H01L29/78678 ,  H01L31/03529 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radio frequency generator (15). The device includes a mechanism (23) for extracting gas from the chamber (12) and a mechanism (18) for supplying gas. The device also comprises a mechanism for purification (31) of the gases introduced into the chamber, these a mechanism being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (12), purifying the gases using purification a mechanism (31), introducing these purified gases into the chamber (12), then creating a plasma between the electrodes (13, 14). A film of intrinsic microcrystalline silicon in then deposited on the substrate.

    摘要翻译： 装置（10）包括一个包含两个电极（13,14）的沉积室（12），其中一个电极包括一个用于衬底（17）的支座（16），并接地，另一个连接到一个电力射频发生器 （15）。 该装置包括用于从腔室（12）中提取气体的机构（23）和用于供应气体的机构（18）。 该装置还包括用于净化（31）引入室中的气体的机构，这些机构被布置为减少沉积气体中包含的氧原子数，这种气体由硅烷，氢和/ 或氩气。 该方法包括在沉积室（12）中产生真空，通过纯化机构（31）纯化气体，将这些纯化气体引入室（12），然后在电极（13,14）之间产生等离子体。 然后将沉积在衬底上的本征微晶硅膜。

    Radiation image pick-up device
    5.
    发明授权
    Radiation image pick-up device 失效
    辐射摄像装置

    公开(公告)号：US06707066B2

    公开(公告)日：2004-03-16

    申请号：US09985534

    申请日：2001-11-05

    申请人： Masakazu Morishita

    发明人： Masakazu Morishita

    IPC分类号： H01L3120

    CPC分类号： G01T1/2018 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14663 ,  H01L2924/0002 ,  H04N5/32 ,  H01L2924/00

    摘要： There is provided a radiation image pick-up device with a large size, in which detection efficiency, light utilization efficiency, and a yield can be improved, high speed operation can be realized, and a signal to noise ratio is improved. The radiation image pick-up device includes a phosphor for converting radiations into light, a semiconductor layer for converting the radiations into charges and converting the light from the phosphor into charges, TFTs for reading signals corresponding to stored charges, and output lines for outputting the charges read by the TFTs. The semiconductor layer, charge storage capacitors, the TFTs, and the output lines are formed respectively on an insulating substrate. The phosphor is laminated on the semiconductor layer and the semiconductor layer is laminated on a formation surface of the charge storage capacitors, the TFTs, and the output lines respectively on the insulating substrate. The semiconductor layer is electrically connected with the charge storage capacitors on the insulating substrate through connection electrodes.

    摘要翻译： 提供了一种具有大尺寸的放射线图像拾取装置，其中可以提高检测效率，光利用效率和产量，可以实现高速操作，并且提高信噪比。 放射线摄像装置包括用于将辐射转换为光的荧光体，用于将辐射转换成电荷并将来自磷光体的光转换为电荷的半导体层，用于读取对应于存储的电荷的信号的TFT以及用于输出 由TFT读取的费用。 半导体层，电荷存储电容器，TFT和输出线分别形成在绝缘基板上。 将磷光体层叠在半导体层上，并且半导体层分别层叠在绝缘基板上的电荷存储电容器，TFT和输出线路的形成面上。 半导体层通过连接电极与绝缘基板上的电荷存储电容器电连接。