Laminar flow guns for light valves
    2.
    发明授权
    Laminar flow guns for light valves 失效
    轻型阀门用层流枪

    公开(公告)号:US4724359A

    公开(公告)日:1988-02-09

    申请号:US920005

    申请日:1986-10-17

    CPC classification number: H01J29/56 H01J29/488

    Abstract: A laminar flow electron gun (16) for use in a light valve of the Schlieren dark field type is disclosed. The gun uses three accelerating electrodes (111, 112 and 113) with critical axial spacing to beam diameter ratios to allow independent adjustment and/or modulation of beam current density at the imaged aperture while reducing criticality of electrode voltages on the second and third accelerating electrodes. The design permits, but does not require, the use of a separate control grid electrode (110). The first accelerating electrode (111) is closely spaced to the cathode (119) to provide a virtual cathode at, or about, the voltage level of that electrode that reduces the thermal beam spread normally encountered in conventional electron guns. Primary control of the narrow angle beam current is by adjustment of the beam current density impinging on the final aperture (121) in the gun. The interaction of negative and positive electron lenses within the gun retains laminar flow conditions to the final aperture over a wide range of beam current levels, assuring low beam spread in the output beam from the gun.

    Abstract translation: 公开了一种用于Schlieren暗场型光阀的层流电子枪(16)。 枪使用具有临界轴向间距至光束直径比的三个加速电极(111,112和113),以允许独立调节和/或调制成像孔径处的光束电流密度,同时减少第二和第三加速电极上的电极电压的临界 。 该设计允许但不需要使用单独的控制栅极(110)。 第一加速电极(111)与阴极(119)紧密分开,以在该电极的电压电平处或附近提供虚拟阴极,从而减少通常在常规电子枪中遇到的热束散射。 窄角束电流的主要控制是通过调节撞击枪中最终孔(121)的束流密度。 枪内的负电子和正电子透镜的相互作用在宽范围的射束电流水平上保持了最终孔径的层流条件,确保了来自枪的输出光束中的低光束扩展。

    Electrostatically deflectable light valve with improved diffraction properties
    4.
    发明授权
    Electrostatically deflectable light valve with improved diffraction properties 失效
    具有改进衍射性能的静电偏转光阀

    公开(公告)号:US3886310A

    公开(公告)日:1975-05-27

    申请号:US39047073

    申请日:1973-08-22

    CPC classification number: H04N5/7425 G02B26/0841 G09F9/372 H01J29/12

    Abstract: An electrostatically deflectable light valve adapted for use in an array for producing television pictures as a projected image upon a large display screen. The light valve structure is such that a plurality of reflective wing portions are free to be deflected along directional axes which are at an angle to the prime directional axes of the overall array, so that light which is predominantly diffracted along the array axes may be decoupled or separated from the signal light produced by activated light valves and used to project the image. The contrast ratio of signal light to background light for the system is significantly improved, using this method of discrimination.

    Abstract translation: 一种静电偏转光阀,适用于在大显示屏上产生电视图像作为投影图像的阵列。 光阀结构使得多个反射翼部分沿着与整个阵列的主方向轴成一角度的方向轴自由地偏转,使得主要沿着阵列轴衍射的光可以被去耦合 或与激活的光阀产生的信号光分离并用于投影图像。 使用这种辨别方法,可以显着提高信号光对背景光的对比度。

    Light-modulating medium for image projection apparatus
    5.
    发明授权
    Light-modulating medium for image projection apparatus 失效
    用于图像投影装置的光调制介质

    公开(公告)号:US3764549A

    公开(公告)日:1973-10-09

    申请号:US3764549D

    申请日:1973-01-11

    Applicant: GEN ELECTRIC

    Inventor: ORSER D

    CPC classification number: G03G5/022 G02B26/00

    Abstract: Addition of small amounts of substituted anthraquinones to a light-modulating fluid substantially reduces the rate of substrate formation in the fluid thereby substantially increasing its useful lifetime and consequently the useful lifetime of the light valve of the projection apparatus in which the modified fluid is used as the light-modulating medium.

    Abstract translation: 将少量的取代的蒽醌加入到光调节流体中基本上降低了流体中基质形成的速率,从而基本上增加了其使用寿命并因此使投影装置的光阀的使用寿命成为改进的流体用作 光调制介质。

    Electron beam addressed electro-optical light valve having input openings
    7.
    发明授权
    Electron beam addressed electro-optical light valve having input openings 失效
    具有输入开口的电子束寻址电光阀

    公开(公告)号:US5379136A

    公开(公告)日:1995-01-03

    申请号:US130700

    申请日:1993-10-04

    CPC classification number: G02F1/133348 G02F1/0333

    Abstract: An electron beam addressed electro-optical (EO) light valve (EOLV) having a matrix of openings formed on and extending through an input conductive layer and further extends into an electrically insulating layer. A partially conductive coating is formed on the surface of each opening in the insulating layer, and has a substantially good electrical contact with the input conductive layer. An EO layer, formed of either a liquid crystal (LC) or a solid state EO crystal, is positioned on the optical output side of the insulating layer. Through the openings electrons from a scanning electron beam can reach and be directly deposited on the partially conductive coatings at a depth substantially close to the EO layer and substantially far away from the input conductive layer. The insulating material surrounding the openings in the insulating layer strictly prevents these deposited electrons from inter-opening motion. These deposited electrons are then discharged along the partially conductive coatings to the input conductive layer before the next scanning cycle. Accordingly, a precisely controllable voltage across each pixel of the EO layer can be obtained. This makes it possible to obtain a precisely controllable orientation state of the molecules in each pixel of the EO layer corresponding to the modulation of the scanning electron beam. Thus an EOLV with significantly high resolution, high contrast ratio, fast response speed, high display gray scale and high sensitivity responding to the input modulation can be achieved according to this invention.

    Abstract translation: 电子束寻址电光(EO)光阀(EOLV),其具有形成在输入导电层上并通过输入导电层延伸的开口矩阵,并进一步延伸到电绝缘层中。 在绝缘层中的每个开口的表面上形成部分导电的涂层,并且与输入导电层具有实质上良好的电接触。 由液晶(LC)或固态EO晶体形成的EO层位于绝缘层的光输出侧。 通过这些开口,来自扫描电子束的电子可以达到并直接沉积在基本上接近EO层的深度并且基本上远离输入导电层的部分导电涂层上。 围绕绝缘层的开口的绝缘材料严格地防止这些沉积的电子开启间的运动。 然后在下一个扫描周期之前,将这些沉积的电子沿着部分导电涂层排放到输入导电层。 因此,可以获得跨越EO层的每个像素的精确可控电压。 这使得可以获得对应于扫描电子束的调制的EO层的每个像素中的分子的精确可控取向状态。 因此,根据本发明,可以实现响应于输入调制的具有高分辨率,高对比度,快速响应速度,高显示灰度和高灵敏度的EOLV。

    Light valve projector having an improved bar plate configuration
    8.
    发明授权
    Light valve projector having an improved bar plate configuration 失效
    光阀投影机具有改进的条板结构

    公开(公告)号:US4802735A

    公开(公告)日:1989-02-07

    申请号:US849990

    申请日:1986-04-10

    CPC classification number: H04N9/3108

    Abstract: A light valve projector of the Schlieren dark field type is provided with an improved input bar plate configuration which achieves greater light efficiencies. The improved input bar plate has orthogonally related rows and columns of slots in which the row slots are spaced between the column slots. Alternating rows of lenslets of a first array divide columns of lenslets of a second array. Light filtering is provided such that one color passes through the row slots and another color passes through the column slots. The output bar plate has a configuration which is complementary to the input bar plate.

    Abstract translation: Schlieren暗场型的光阀投影仪具有改进的输入条板结构,其实现更高的光效。 改进的输入条板具有正交相关的行和列的槽,其中行槽在列槽之间间隔开。 第一阵列的小透镜的交替行排列第二阵列的小透镜列。 提供光过滤,使得一种颜色通过行槽,另一种颜色通过列槽。 输出条板具有与输入条板互补的构造。

    Method for fabricating a DSDT target
    9.
    发明授权
    Method for fabricating a DSDT target 失效
    制造DSDT目标的方法

    公开(公告)号:US4065840A

    公开(公告)日:1978-01-03

    申请号:US751920

    申请日:1976-12-17

    CPC classification number: H01J29/39 H01J9/233

    Abstract: A process for the fabrication of a deformographic storage display tube (DSDT) target in which a wafer of silicon or other etchable material is used (1) as a temporary support during the generation of the active region of the target and (2) as a supporting structure for the completed target. The DSDT target structure comprises a reflection layer on a dielectric layer supported in turn on a silicon or other etchable material wafer, the wafer being etched off at its back side to expose the dielectric layer while providing an outer frame support structure made of the wafer around the edge, with the dielectric layer being etched to form pillars of the dielectric on the backside of the reflection layer, whereby the dielectric pillars enable a deformation action to occur in the region between the pillars. An inner frame support structure comprised of a similarly etched wafer, a dielectric layer and a secondary electron emission layer is fitted against the bottoms of the pillars and bonded to the outer frame support structure, thereby forming the completed target.

    Abstract translation: 一种用于制造其中使用硅或其它可蚀刻材料的晶片(1)作为靶的有源区域产生期间的临时支持物的形态存储显示管(DSDT)靶的方法,以及(2)作为 完成目标的支持结构。 DSDT目标结构包括依次在硅或其它可蚀刻材料晶片上支撑的电介质层上的反射层,晶片在其背面蚀刻掉以暴露电介质层,同时提供由晶片周围形成的外框架支撑结构 边缘,其中介电层被蚀刻以在反射层的背面上形成电介质的柱,由此介电柱使得能够在柱之间的区域中发生变形作用。 由相似蚀刻的晶片,电介质层和二次电子发射层组成的内框架支撑结构被装配到柱的底部并结合到外框架支撑结构,由此形成完成的目标。

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