摘要:
There is disclosed a method and apparatus for mapping between logical and physical addresses in a solid state data storage device, particularly but not exclusively a magnetic random access solid state data storage device, in which a list of mappings between ranges of logical addresses and ranges of physical addresses are stored in a data table, the mappings being operated on to look up a physical address from a logical address and vice versa, and being operated on by a data processor, to amend the data mappings by introduction of new ranges of logical and physical addresses, upon ranges of individual physical memory elements becoming defective.
摘要:
A branched command/address bus architecture between a memory register and a plurality of memory units includes a main bus connected to the memory register. A first sub-bus is connected to the main bus and branches into a first number of memory unit buses, wherein each of them is connected to a command/address input of a memory unit associated with the same. A second sub-bus is also connected to the main bus and branches into a second number of memory unit buses, wherein each of them is connected to a command/address input of a memory unit associated with the same, wherein the second number is smaller than the first number. Further, the second sub-bus branches into a number of auxiliary buses, wherein the number of auxiliary buses corresponds to the difference between the first number and the second number, wherein each auxiliary bus is capacitively loaded corresponding to the memory unit buses and does not serve for driving a memory unit.
摘要:
A ferroelectric memory circuit (C) comprises a ferroelectric memory cell in the form of a ferroelectric polymer thin film (F) and first and second electrodes (E1; E2) respectively, contacting the ferroelectric memory cell (F) at opposite surfaces thereof, whereby a polarization state of the cell can be set, switched or detected by applying appropriate voltages to the electrodes (E1; E2). At least one of the electrodes (E1; E2) comprises at least one contact layer (P1; P2), said at least one contact layer (P1; P2) comprising a conducting polymer contacting the memory cell (C), and optionally a second layer (M1; M2) of a metal film contacting the conducting polymer (P1; P2), whereby said at least one of the electrodes (E1; E2) either comprises a conducting polymer contact layer (P1; P2) only, or a combination of a conducting polymer contact layer (P1; P2) and a metal film layer (M1; M2). A method in the fabrication of a ferroelectric memory circuit of this kind comprises steps for depositing a first contact layer of conducting polymer thin film on the substrate, depositing subsequently a ferroelectric polymer thin film on the first contact layer, and then depositing a second contact layer on the top of the ferroelectric polymer thin film.
摘要:
Upon implementing a data registration into or a data retrieval from a data table (3) where first item data are registered along with corresponding second item data, there are used a first pointer table (1) where pointers to part of the registered data in the data table are registered in storage positions that are designated by hash values obtained by applying a first hash function (6) to the first item data of the part of the registered data, and a second pointer table (2) where pointers to the other registered data in the data table are registered in storage positions that are designated by hash values obtained by applying a second hash function (22) to the first item data of the other registered data.
摘要:
The present disclosure relates to an address sub-sampling apparatus and method, and an image sensor employing the same. An address sub-sampling apparatus includes a counting unit that generates a binary address of N bits, N being a natural number larger than 2. The address sub-sampling apparatus also includes an address conversion unit that sub-samples the binary address of N bits to output a sub-sampled address having first, second and third bit groups, wherein the sub-sampled address is arranged in order of the third, the first and the second bit groups from the MSB (Most Significant Bit). The first bit group, which is a combination of digits in the sub-sampled address corresponding to the number of addresses to be skipped, being set as null0null, the second bit group, which includes the LSB (Least Significant Bit) corresponding to bits of the binary address, and the third bit group, which includes the MSB being set to shift address subtracted by the number of bits in the first bit group from the MSB in the binary address.
摘要:
The present invention relates to a system and method for increasing the manufacturing yield of a plurality of memory cells used in cell arrays. A programmable fuse, having both hardware and software elements, is used with the plurality of memory cells to indicate that at least one memory cell is unusable and should be shifted out of operation. The software programmable element includes a programmable register adapted to shift in an appropriate value indicating that at least one of the memory cells is flawed. The hardware element includes a fuse gated with the programmable register. Shifting is indicated either by software programmable fuse or hard fuse. Soft fuse registers may be chained together forming a shift register.
摘要:
The invention provides an improved digital data processing system, e.g., storage area network (SAN), of the type having a first digital data processor, e.g., a SAN server, and a second digital data processor, e.g., a SAN client, coupled to one another and to one or more storage units, e.g., disk drives. A volume is stored on one or more of the storage devices, with at least two of its blocks residing at locations that are not contiguous with one another. The improvement is characterized, according to aspects of the invention, by transmission from the first to the second digital data processor of one or more addresses. These can constitute, in total, fewer such addresses than would be provided in a canonical map of the volume and, indeed, can comprise (by way of non-limiting example) a start address for each file and/or a portion of the volume on each storage device where the volume resides. The improvement is further characterized by an interpreter on the second digital data processor that interprets intermediate code (e.g., p-code) or other software to determine physical locations of the blocks that comprise the volume and/or file as a function of the addresses received from the first digital data processor. That software, according to aspects of the invention, embodies a methodology for determining the physical block addresses of a volume and/or file, e.g., from the volume start address(es). It can, according to further aspects of the invention, be transmitted by the first digital data processor to the second digital data processor, though it can be sourced from elsewhere, as well.
摘要:
A micro-controller is connected to an external circuit via an address bus and a read control signal line. The external circuit includes an enable circuit, a decoder and a register group. The enable circuit produces an enable signal from the sixteenth bit of 16-bit information on the address bus and a control signal on the read control signal line. The decoder creates an address from the ninth to fifteenth bits of the 16-bit information. When the enable signal is valid, the register group writes a signal value of the first to eighth bits of the 16-bit information into a register specified by the address. Accordingly, the micro-controller can send the read control signal, the register address and the register data to the external circuit via the address bus. It is therefore possible to write data into the external circuit without using a write control signal line.
摘要:
A method and apparatus for breaking complex X86 segment operations and segmented addressing into explicit sub-operations so that they may be exposed to compiler or translator-based optimizations.
摘要:
A memory device testing apparatus transfers at high speed a fail signal from a failure analysis memory unit 100 to a memory failure remedy analysis unit 200. The failure analysis memory unit 100 has a data storage memory 110 and a compact memory 120. The data storage memory 110 is divided into at least two sub address spaces. The divided sub address spaces are assigned to the addresses in the compact memory 120. A address generation control unit reads data stored in the compact memory 120. An address generation unit 132 generates a memory address signal 143 based on a sub address signal 141 and a detail address signal 142. The detail address signal 142 is incremented by the address generation control unit 125. The data in the sub address space storing the fail signal is transferred to the memory failure remedy analysis unit 200. If the data read from the compact memory 120 does not contain failure information, the data stored in the corresponding sub address space is not transferred.