PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

    公开(公告)号:US20220084835A1

    公开(公告)日:2022-03-17

    申请号:US17346810

    申请日:2021-06-14

    摘要: A plasma etching method according to an embodiment is a method for etching a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas includes at least one selected from a first fluorocarbon which has a main chain of six or more carbons bonded in a linear manner, the main chain having a structure of single bond and double bond alternately joined, a second fluorocarbon which has a main chain of six or more carbons bonded in a linear manner, the main chain having a structure of single bond and triple bond alternately joined, and a third fluorocarbon which has a main chain of five or more carbons bonded in a linear manner, the main chain having a structure which includes double bond and triple bond.