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    Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing the superconductor
    3.
    发明授权
    Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing the superconductor 失效
    具有低超导各向异性的掺杂Mg的高温超导体和制造超导体的方法

    公开(公告)号：US06605569B2

    公开(公告)日：2003-08-12

    申请号：US09870465

    申请日：2001-06-01

    Applicant: Hideo Ihara ,  Shyam Kishore Agarwal

    Inventor： Hideo Ihara ,  Shyam Kishore Agarwal

    IPC: H01B1200

    CPC classification number: H01L39/126 ,  Y10S505/776 ,  Y10S505/779

    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan+1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.

    Abstract translation: 具有低超导各向异性的Mg掺杂的高温超导体包括由电荷储存层和超导层构成的二维分层结构，其中构成电荷储存层的一些或全部原子是Cu和O原子，金属化或呈现 电荷储存层超导，构成超导层的CunCan + 1O2n的Ca的一部分被Mg代替，增加CuO 2层之间的超导耦合，增加了超导层的厚度，因此增加了厚度方向的相干长度 基于不确定性原理，降低了超导各向异性。

    MG-doped high-temperature superconductor having the superconducting anisotropy and method for producing the superconductor
    5.
    发明授权
    MG-doped high-temperature superconductor having the superconducting anisotropy and method for producing the superconductor 失效
    具有低超导各向异性的MG掺杂的高温超导体和用于制造超导体的方法

    公开(公告)号：US06281171B1

    公开(公告)日：2001-08-28

    申请号：US09270682

    申请日：1999-03-16

    Applicant: Hideo Ihara ,  Shyam Kishore Agarwal

    Inventor： Hideo Ihara ,  Shyam Kishore Agarwal

    IPC: C04B3504

    CPC classification number: H01L39/126 ,  Y10S505/776 ,  Y10S505/779

    Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan−1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.

    Abstract translation: 具有低超导各向异性的Mg掺杂的高温超导体包括由电荷储存层和超导层构成的二维分层结构，其中构成电荷储存层的一些或全部原子是Cu和O原子，金属化或呈现 电荷储存层超导，构成超导层的CunCan-1O2n的Ca的一部分被Mg代替，增加CuO 2层之间的超导耦合，增加了超导层的厚度，因此增加了厚度方向上的相干长度 基于不确定性原理，降低了超导各向异性。

    Alkaline-doped mercury cuprate superconductors
    6.
    发明授权
    Alkaline-doped mercury cuprate superconductors 失效
    碱性掺杂水银铜超导体

    公开(公告)号：US5843870A

    公开(公告)日：1998-12-01

    申请号：US775359

    申请日：1997-01-03

    Applicant: Judy Z. Wu ,  Sehwan Yoo

    Inventor： Judy Z. Wu ,  Sehwan Yoo

    IPC: C04B35/45 ,  H01L39/12 ,  C04B35/01

    CPC classification number: C04B35/45 ,  H01L39/126 ,  Y10S505/776

    Abstract: Alkaline-doped superconductors of the formula X M.sub.2 Ca.sub.2 Cu.sub.3 O.sub.8+.alpha. are provided where X is selected from the group consisting of TI, Pb, Mo, Hg and mixtures thereof, M is selected from the group consisting of Ba, Sr and mixtures thereof, and a ranges from zero to about 0.2, and being doped with a dopant selected from the group consisting of Na and Li up to a level of up to about 12% molar ratio, based upon the amount of the element X taken as 100%. The superconductors of the invention exhibit extremely high T.sub.c onset and T.sub.cO values and have high J.sub.c properties as well. The superconductors can be fabricated at relatively low annealing temperatures (750.degree.-820.degree. C.) making them suitable for use as thin films with a variety of conventional substrates.

    Abstract translation: 提供式X M2Ca2Cu3O8 +α的碱性掺杂超导体，其中X选自TI，Pb，Mo，Hg及其混合物，M选自Ba，Sr及其混合物，范围为 基于取为100％的元素X的量，将从Na和Li中掺杂的掺杂剂掺杂至高达约12％摩尔比的掺杂剂。 本发明的超导体表现出极高的Tc起始和TcO值，并具有高的Jc性质。 超导体可以在相对较低的退火温度（750°-820℃）下制造，使其适合用作具有各种常规基板的薄膜。

    Oxide superconductor and method for manufacturing the same
    7.
    发明授权
    Oxide superconductor and method for manufacturing the same 失效
    氧化物超导体及其制造方法

    公开(公告)号：US5705457A

    公开(公告)日：1998-01-06

    申请号：US525912

    申请日：1995-09-08

    Applicant: Toshiyuki Tamura ,  Seiji Adachi ,  Xiao-Jing Wu ,  Hisao Yamauchi

    Inventor： Toshiyuki Tamura ,  Seiji Adachi ,  Xiao-Jing Wu ,  Hisao Yamauchi

    IPC: C01G1/00 ,  C01G21/00 ,  C04B35/45 ,  C04B35/645 ,  H01B13/00 ,  H01L39/24 ,  H01L39/12

    CPC classification number: C04B35/45 ,  C04B35/645 ,  Y10S505/742 ,  Y10S505/776

    Abstract: The present invention provides an oxide superconductor which is expressed in the composition formula (Pb.sub.1-x-y M.sub.x (A1).sub.y)(A2).sub.2 (A3).sub.n-1 (Cu).sub.n (O).sub.2n+3+z (wherein 0.ltoreq.0.6, 0.ltoreq.y.ltoreq.0.6, x+y.ltoreq.0.6, n denotes integers of 1 or more, -0.6.ltoreq.z.ltoreq.0.5, M denotes Cu or Cd, and A1, A2 and A3 denote at least one element of Ba, Sr, and Ca, respectively) and which has a crystal structure stacking rock salt structure based portions and infinite layer structure portions, wherein the rock salt structure based portion has a structure that an atoms layer having 0.5-1.5 oxygen atoms, in case the total atoms number of Pb, M and A1 is one, and an atoms layer having one or less oxygen atoms per one A2 atom, are stacked and the infinite layer structure portion has a structure that an atoms layer having 2 oxygen atoms per one Cu atom and an atoms layer of A3 atoms only, are stacked. Further, the present invention provides a method for manufacturing the above oxide superconductor by heat-treating a raw material of oxide superconductor at a temperature of 800.degree.-1200.degree. C. under superhigh pressure of 2-8 GPa.

    Abstract translation: 本发明提供以组成式（Pb1-x-yMx（A1）y）（A2）2（A3）n-1（Cu）n（O）2n + 3 + z（其中0）表示的氧化物超导体 n = 0.6，0≤y≤0.6，x + y <0.6，n表示1以上的整数，-0.6≤Z≤0.5，M表示Cu或Cd，A1表示 ，A2和A3分别表示Ba，Sr和Ca中的至少一种元素），其具有层叠基于盐岩结构的部分和无限层结构部分的晶体结构，其中岩盐结构基部分具有以下结构：原子 在氧原子数为0.5-1.5的情况下，在Pb，M和Al的总原子数为1的情况下，每个A2原子具有一个或多个氧原子的原子层被堆叠，并且无限层结构部分具有以下结构： 每个Cu原子具有2个氧原子并且仅具有A3原子的原子层的原子层被堆叠。 此外，本发明提供一种通过在800〜1200℃的温度下在2-8GPa的超高压下热处理氧化物超导体的原料来制造上述氧化物超导体的方法。

    Superconducting composition comprising Ln-Th-Cu-O, wherein Ln is Pr, Nd, Pm, Sm, Eu, Gd, Er or mixtures thereof
    10.
    发明授权
    Superconducting composition comprising Ln-Th-Cu-O, wherein Ln is Pr, Nd, Pm, Sm, Eu, Gd, Er or mixtures thereof 失效
    包含LN-TH-CU-O的超导性组合物，其中LN是PR，ND，PM，SM，EU，GD，ER或其混合物

    公开(公告)号：US5151409A

    公开(公告)日：1992-09-29

    申请号：US469225

    申请日：1990-01-24

    Applicant: Masahiko Hiratani ,  Shin'ichiro Saitoh ,  Katsuki Miyauchi ,  Tsuyoshi Seko

    Inventor： Masahiko Hiratani ,  Shin'ichiro Saitoh ,  Katsuki Miyauchi ,  Tsuyoshi Seko

    IPC: H01L39/10 ,  H01L39/22

    CPC classification number: H01L39/126 ,  H01L39/225 ,  Y10S505/776 ,  Y10S505/779

    Abstract: A superconducting oxide composition comprising Ln-Th-Cu-O wherein Ln indicates at least one element selected from a group consisting of Pr, Nd, Pm, Sm, Eu, Gd and Er. A superconducting structure is formed in such a manner that at least an insulating layer is sandwiched between two superconductor layers but the superconductor layers are electrically coupled with each other, and a superconducting device including the superconducting structure is constructed so as to perform a switching operation for an electric signal, to detect a light signal, and to detect the intensity of a magnetic field. Another superconducting device is formed so that two superconductor layers are put in direct contact with each other, and a tunnel current between the superconductor layers can be controlled. Further, a superconductor structure is formed which includes a plurality of superconductor layers and has a superconducting transition temperature or superconducting critical current higher than that of each superconductor layer, and a superconducting device including this superconducting structure can operate at a relatively high temperature. Furthermore, a superconducting circuit device is formed which can emit a coherent electromagnetic wave having a wavelength of the order of 10 .mu.m on the basis of the difference in energy gap between adjacent superconductor layers. Additionally, novel oxide superconductor materials are disclosed.

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