摘要:
A W-band waveguide variable controlled oscillator incorporating a capacitively coupled Gunn diode and varactor diode arranged in such a manner that adverse environmental conditions do not deleteriously effect the stability of the output of the oscillator. The Gunn diode is electrically connected to a waveguide chamber within the oscillator and includes a resonator electrically connected to its end cap. The resonator is electrically connected to a DC bias source by means of a DC bias filter and a wire inductor. Opposite and above the Gunn diode is a varactor assembly including a varactor diode, which is also electrically connected to a DC bias source through a DC bias filter. A variable coupling spacer within the varactor assembly adjusts the distance between the varactor diode and the Gunn diode such that the capacitive coupling between the two can be adjusted. In addition, an adjustable back-short is incorporated within the waveguide channel to adjust the power output of the oscillator. Also, a fine tuning screw is threadably engaged to the waveguide channel to adjust the capacitance of the resonator. This configuration enables the oscillator to have a stable output and low power losses under adverse environmental conditions.
摘要:
The components of a transistor oscillator are mounted on an end cap rotatably mounted on the outer tube of a cavity resonator which stabilizes the oscillator. The intensity with which a high frequency is applied to the cavity resonator is adjustable by rotation of the end cap.
摘要:
A housing defining a first cavity forming a transmission line and a negative impedance semiconductor device terminating one end of the transmission line in a negative impedance, the housing further defining a second cavity resonant at a predetermined frequency and a means of electromagnetically coupling between the transmission line and the second cavity to couple energy therebetween, a reactive element formed between said negative impedance semiconductor device and the housing to provide a shunt susceptance to parallel resonate with the susceptance of the semiconductor device at the desired frequency and bias, and load isolator connected to the opposite end of the transmission line for transmitting RF output pulses to the RF load and for applying a DC bias thereto normally at a first level and periodically reduced to a second level for a short duration, said semiconductor device operating as a series resonant circuit with the DC bias at the first level to cause energy to be stored in the resonant cavity and operating in parallel resonance with the reactive element when the DC bias is at the second level to lower the Q of the resonant cavity and allow energy to flow from the resonant cavity to the RF load in a short duration, high peak power pulse.
摘要:
This microwave oscillator in one embodiment has two tuning rods (16 and 18) configured to extend within a resonant cavity (12). One of these tuning rods (18) attaches to a shaft (19) that is affixed at one end and that is comprised of a material having a thermal coefficient of expansion that is different from the material comprising the housing (11) that forms the cavity (12). As a result, movement of the tuning rods (16 and 18) will vary as temperature varies, with a resulting stability in the frequency of oscillation.
摘要:
A circuit arrangement for generating and stably amplifying broadband rf signals. The circuit arrangement includes a first rectangular waveguide designed for operation in a frequency range below its cutoff frequency and a second rectangular waveguide for operation at the operating frequency. An active semiconductor element is disposed in the first rectangular waveguide and a direct voltage is supplied to the semiconductor element. At least one waveguide section is provided for connecting the first and second rectangular waveguides and has the same width as the second rectangular waveguide and a height less than the second rectangular waveguide. The waveguide section matches the cross section of the first rectangular waveguide to the cross section of the second rectangular waveguide. A plurality of tuning devices are disposed in the first rectangular waveguide and the waveguide section and include a capacitively acting tuning screw and an inductively acting tuning device, the latter being disposed in an end of the first rectangular waveguide remote from the waveguide section.
摘要:
A compact, easily tunable, silicon avalanche diode oscillator for pulsed operation in the L-band which has an efficiency of about 40 percent, equal to that of vacuum tube oscillators operating at these frequencies, is obtained by utilizing a coaxial line composed of three serially connected sections in which the intermediate section has a characteristic impedance significantly larger than either of the other sections. One end of the coaxial line is short circuited; the avalanche diode is coupled to the coaxial line at a point between the short circuit and the beginning of the intermediate section; a variable capacitance is connected across the intermediate section at a given point thereof; and the other end of the coaxial line is connected to the output of the oscillator. The short circuit is made movable with respect to the position of the avalanche diode and the variable capacitance is made adjustable.
摘要:
A microwave cavity oscillator includes a cavity block of a suitable metal having a cavity in one wall. A microwave diode is secured to the closed end of the open-ended cavity with a tubular center conductor secured to the diode. A dielectric tuning element of ''''Rexolite'''' is mounted for axial adjustment within the open end of the cavity. The element provides a direct capacitive coupling of the open-ended cavity to the center conductor to change cavity impedance and the frequency without loading the cavity with the consequent losses. A bias wire is connected to the center conductor and extends laterally through an opening to a bias disc within a recess. A dielectric plate is placed between the disc and recess base. A bias pin is carried by a dielectric member within a bias plug which threads into the recess. The pin bears on the back of the disc to clamp the dielectric plane and element against the base recess. The diode package defines a current-dividing network around the diode permitting adjustment of the circulating current through the diode.
摘要:
A millimeter wave microstrip oscillator utilizing either a pulsed or CW IMPATT diode as the active element provides relatively high power output not available with a GUNN diode. The circuit comprises a block of a conductive metal having a channel of rectangular cross-section formed therein and including a cylindrical well formed inwardly in the block from the floor of the channel. A packaged IMPATT diode of either the pulsed or CW variety fits into the well with the cap portion of the package coplanar with the microstrip circuit pattern when the microstrip rests on the floor of the channel. The pattern includes a shunt open circuit stub and an impedance transformer connected to the terminals of the IMPATT diode for effectively matching the diode's complex impedance with the load. A conductive cover is secured to the block and a laterally and vertically movable tuning screw passes through the cover for fine tuning the oscillator's output frequency and power. The circuit is capable of producing CW or pulsed signals with appropriate choice of IMPATT diode bias signal (pulsed or DC), microstrip circuit pattern dimensions and tuning screw diameter and position.
摘要:
A microwave cavity oscillator has a semiconductor device, for example a transistor for exciting the cavity to oscillate. The device is mounted upon a substrate which is itself mounted, conveniently soldered, upon a carrier which is releasably secured in a chamber adjacent the cavity. The carrier and substrate are mounted so that the device is coupled to the cavity via a hole extending therebetween and can be removed and installed as a sub-assembly to facilitate tuning and other adjustments in a test bed. In preferred embodiments one end of the carrier is located in spigot-and-socket fashion in a recess surrounding a hole communicating with the cavity. The other end of the carrier is urged by spring means to positively and accurately locate the carrier relative to the cavity. A part of the substrate extends through the hole and into the cavity. The transistor is mounted on the part within the hole and the part within the cavity serves as a capacitive coupling probe.