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公开(公告)号:US08217403B1
公开(公告)日:2012-07-10
申请号:US13179073
申请日:2011-07-08
申请人: Shigenobu Sekine , Yurina Sekine
发明人: Shigenobu Sekine , Yurina Sekine
IPC分类号: H01L27/15
CPC分类号: H05K1/097 , H01L23/49866 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L31/022425 , H01L31/0682 , H01L33/62 , H01L2224/16145 , H01L2224/16225 , H01L2224/2929 , H01L2224/293 , H01L2224/81191 , H01L2224/81193 , H01L2224/81395 , H01L2224/81903 , H01L2224/83191 , H01L2224/83192 , H01L2224/8359 , H01L2224/83605 , H01L2224/83609 , H01L2224/83611 , H01L2224/83613 , H01L2224/83618 , H01L2224/83624 , H01L2224/83639 , H01L2224/83644 , H01L2224/83647 , H01L2224/83655 , H01L2224/8366 , H01L2224/83666 , H01L2224/83669 , H01L2224/83701 , H01L2224/83799 , H01L2224/83815 , H01L2224/83825 , H01L2224/83851 , H01L2224/83886 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/00011 , H01L2924/01327 , H01L2924/12041 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H05K1/111 , H05K2201/0338 , H05K2201/099 , Y02E10/547 , Y02P70/611 , H01L2924/00 , H01L2224/8159 , H01L2924/00014 , H01L2224/81799 , H01L2924/00012 , H01L2224/81639 , H01L2224/81647 , H01L2224/81644 , H01L2224/81669 , H01L2224/81666 , H01L2224/81624 , H01L2224/81618 , H01L2224/8166 , H01L2224/81655 , H01L2224/81611 , H01L2224/81609 , H01L2224/81613 , H01L2224/81605 , H01L2224/29075
摘要: An electronic device includes a substrate and an electronic component. The substrate has a metallized trace. The metallized trace has a metallized layer and an insulation layer. The metallized layer has a high melting point metal component and a low melting point metal component, the high melting point metal component and the low melting point metal component being diffusion bonded together. The insulation layer is formed simultaneously with the metallized layer to cover an outer surface of the metallized layer. The electronic component is electrically connected to the metallized layer.
摘要翻译: 电子设备包括基板和电子部件。 衬底具有金属化迹线。 金属化迹线具有金属化层和绝缘层。 金属化层具有高熔点金属成分和低熔点金属成分,高熔点金属成分和低熔点金属成分被扩散接合在一起。 绝缘层与金属化层同时形成以覆盖金属化层的外表面。 电子部件电连接到金属化层。