公开(公告)号：US20240203917A1

公开(公告)日：2024-06-20

申请号：US18393489

申请日：2023-12-21

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh

IPC: H01L23/00 ,  H01L25/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03616 ,  H01L2224/0362 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/05013 ,  H01L2224/05015 ,  H01L2224/05026 ,  H01L2224/05076 ,  H01L2224/05082 ,  H01L2224/05105 ,  H01L2224/05109 ,  H01L2224/05111 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05551 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/05605 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80375 ,  H01L2224/80895

Abstract: A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

公开(公告)号：US11894326B2

公开(公告)日：2024-02-06

申请号：US17370576

申请日：2021-07-08

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh

IPC: H01L23/00 ,  H01L25/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/0347 ,  H01L2224/0362 ,  H01L2224/0384 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03616 ,  H01L2224/03845 ,  H01L2224/05013 ,  H01L2224/05015 ,  H01L2224/05026 ,  H01L2224/05076 ,  H01L2224/05082 ,  H01L2224/05105 ,  H01L2224/05109 ,  H01L2224/05111 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05551 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/05605 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80375 ,  H01L2224/80895 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05609 ,  H01L2924/00014 ,  H01L2224/05605 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014

Abstract: A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.