公开(公告)号：USRE43404E1

公开(公告)日：2012-05-22

申请号：US12728630

申请日：2010-03-22

Applicant: Thomas H. DiStefano ,  Joseph Fjelstad

Inventor： Thomas H. DiStefano ,  Joseph Fjelstad

IPC: H01L21/44

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2224/81

Abstract: A method of providing a substantially void free layer for one or more flip chip assemblies, or one or more microelectronic components, utilizing a curable encapsulant. Also disclosed is a method of injecting an encapsulant into an assembly and a method of treating a microelectronic component to form a void free layer.

Abstract translation: 一种利用可固化密封剂为一个或多个倒装芯片组件或一个或多个微电子部件提供基本无空隙的方法。 还公开了将密封剂注入到组件中的方法以及处理微电子部件以形成无空隙层的方法。

公开(公告)号：US20020094671A1

公开(公告)日：2002-07-18

申请号：US10097032

申请日：2002-03-13

Inventor： Thomas H. Distefano ,  Joseph Fjelstad

IPC: H01L021/44

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2224/81

Abstract: A method of providing a substantially void free layer for one or more flip chip assemblies, or one or more microelectronic components, utilizing a curable encapsulant. Also disclosed is a method of injecting an encapsulant into an assembly and a method of treating a microelectronic component to form a void free layer.

Abstract translation: 一种利用可固化密封剂为一个或多个倒装芯片组件或一个或多个微电子部件提供基本无空隙的方法。 还公开了将密封剂注入到组件中的方法以及处理微电子部件以形成无空隙层的方法。

公开(公告)号：US5834339A

公开(公告)日：1998-11-10

申请号：US610610

申请日：1996-03-07

Applicant: Thomas H. Distefano ,  Joseph Fjelstad

Inventor： Thomas H. Distefano ,  Joseph Fjelstad

IPC: H01L21/56 ,  H01L21/68 ,  H01L23/31 ,  H01L23/495 ,  H01L21/44

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311

Abstract: A method for the removal of voids and gas bubbles within uncured or partially cured microelectronic component encapsulants and adhesive/chip attach layers. A sealed void or gas bubble within a gap between a microelectronic component and a supporting substrate is substantially eliminated through the application of a uniform pressure (isostatic or hydrostatic) and energy such that a substantially void/bubble free interposer layer is created.

Abstract translation: 在未固化或部分固化的微电子部件密封剂和粘合剂/芯片附着层中去除空隙和气泡的方法。 通过施加均匀的压力（等静压或静水压）和能量使得产生基本上无空隙/无气泡的中间层，基本上消除了微电子部件和支撑基板之间的间隙内的密封的空隙或气泡。

公开(公告)号：US20030027373A1

公开(公告)日：2003-02-06

申请号：US10229593

申请日：2002-08-28

Applicant: Tessera, Inc.

Inventor： Thomas H. DiStefano ,  Joseph Fjelstad

IPC: H01L021/48

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2224/81

Abstract: A method of treating an interposer layer includes disposing an interposer layer between a semiconductor wafer and a substrate so that voids within the interposer layer are sealed and applying pressure to substantially eliminate the voids. A method of creating a substantially void-free interposer layer includes injecting the interposer layer between a wafer and a substrate and applying pressure to substantially remove the voids.

Abstract translation: 处理插入层的方法包括在半导体晶片和基板之间设置插入层，使得内插层内的空隙被密封并施加压力以基本上消除空隙。 创建基本上无空隙的中介层的方法包括将晶片和衬底之间的插入层注入并施加压力以基本上去除空隙。

公开(公告)号：US06780747B2

公开(公告)日：2004-08-24

申请号：US10097032

申请日：2002-03-13

Applicant: Thomas H. Distefano ,  Joseph Fjelstad

Inventor： Thomas H. Distefano ,  Joseph Fjelstad

IPC: H01L2144

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2224/81

Abstract: A method of providing a substantially void free layer for one or more flip chip assemblies, or one or more microelectronic components, utilizing a curable encapsulant. Also disclosed is a method of injecting an encapsulant into an assembly and a method of treating a microelectronic component to form a void free layer.

Abstract translation: 一种利用可固化密封剂为一个或多个倒装芯片组件或一个或多个微电子部件提供基本无空隙的方法。 还公开了将密封剂注入到组件中的方法以及处理微电子部件以形成无空隙层的方法。

公开(公告)号：US06653172B2

公开(公告)日：2003-11-25

申请号：US10229593

申请日：2002-08-28

Applicant: Thomas H. DiStefano ,  Joseph Fjelstad

Inventor： Thomas H. DiStefano ,  Joseph Fjelstad

IPC: H01L2144

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2224/81

Abstract: A method of treating an interposer layer includes disposing an interposer layer between a semiconductor wafer and a substrate so that voids within the interposer layer are sealed and applying pressure to substantially eliminate the voids. A method of creating a substantially void-free interposer layer includes injecting the interposer layer between a wafer and a substrate and applying pressure to substantially remove the voids.

公开(公告)号：US06458681B1

公开(公告)日：2002-10-01

申请号：US09638079

申请日：2000-08-14

Applicant: Thomas H. DiStefano ,  Joseph Fjelstad

Inventor： Thomas H. DiStefano ,  Joseph Fjelstad

IPC: H01L2144

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2224/81

Abstract: A method of providing a substantially void free layer for one or more flip chip assemblies, or one or more microelectronic components, utilizing a curable encapsulant. Also disclosed is a method of injecting an encapsulant into an assembly and a method of treating a microelectronic component to form a void free layer.

Abstract translation: 一种利用可固化密封剂为一个或多个倒装芯片组件或一个或多个微电子部件提供基本无空隙的方法。 还公开了将密封剂注入到组件中的方法以及处理微电子部件以形成无空隙层的方法。

公开(公告)号：US6107123A

公开(公告)日：2000-08-22

申请号：US188599

申请日：1998-11-09

Applicant: Thomas H. Distefano ,  Joseph Fjelstad

Inventor： Thomas H. Distefano ,  Joseph Fjelstad

IPC: H01L21/56 ,  H01L21/68 ,  H01L23/31 ,  H01L23/495 ,  H01L21/44

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49572 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80203 ,  H01L2224/80207 ,  H01L2224/81192 ,  H01L2224/81904 ,  H01L2224/83209 ,  H01L2224/9212 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311

Abstract: A method for the removal of voids and gas bubbles within uncured or partially cured microelectronic component enapsulants and adhesive/chip attach layers. A sealed void or gas bubble within a gap between a microelectronic component and a supporting substrate is substantially eliminated through the application of a uniform pressure (isostatic or hydrostatic) and energy such that a substantially void/bubble free interposer is created.

Abstract translation: 在未固化或部分固化的微电子元件助剂和粘合剂/芯片附着层中去除空隙和气泡的方法。 通过施加均匀的压力（等静压或静水压）和能量使得产生基本上无空隙/无气泡的中间层，基本上消除了微电子部件和支撑基板之间的间隙内的密封空隙或气泡。