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    Thin layer photonic integrated circuit based optical signal manipulators
    2.
    发明授权
    Thin layer photonic integrated circuit based optical signal manipulators 有权

    公开(公告)号：US09952456B2

    公开(公告)日：2018-04-24

    申请号：US14894823

    申请日：2014-06-09

    申请人： Electronic Photonic IC Inc. (EPIC Inc.)

    发明人： Yingyan Huang

    IPC分类号： G02F1/035 ,  G02F1/025 ,  G02F1/015 ,  G02B6/12 ,  G02B6/122 ,  G02F1/017 ,  G02F1/17 ,  G02F1/19

    CPC分类号： G02F1/025 ,  G02B6/12002 ,  G02B6/1225 ,  G02B6/1228 ,  G02B2006/12142 ,  G02F1/015 ,  G02F1/01708 ,  G02F1/17 ,  G02F1/19 ,  G02F2001/0152 ,  G02F2001/0154 ,  G02F2001/0157

    摘要： Integrated optical intensity or phase modulators capable of very low modulation voltage, broad modulation bandwidth, low optical power loss for device insertion, and very small device size are of interest. Such modulators can be of electro-optic or electro-absorption type made of an appropriate electro-optic or electro-absorption material in particular or referred to as an active material in general. An efficient optical waveguide structure for achieving high overlapping between the optical beam mode and the active electro-active region leads to reduced modulation voltage. In an embodiment, ultra-low modulation voltage, high-frequency response, and very compact device size are enabled by a semiconductor modulator device structure, together with an active semiconductor material that is an electro-optic or electro-absorption material, that are appropriately doped with carriers to substantially lower the modulator voltage and still maintain the high frequency response. In another embodiment, an efficient optical coupling structure further enables low optical loss. Various embodiments combined enable the modulator to reach lower voltage, higher frequency, low optical loss, and more compact size than previously possible in the prior arts.

    Optical modulator
    5.
    发明授权
    Optical modulator 有权
    光调制器

    公开(公告)号：US09551887B2

    公开(公告)日：2017-01-24

    申请号：US14780525

    申请日：2014-02-27

    申请人： Sumitomo Osaka Cement Co., Ltd.

    发明人： Junichiro Ichikawa ,  Toshio Kataoka ,  Katsutoshi Kondou

    IPC分类号： G02F1/025 ,  G02F1/03 ,  G02F1/035 ,  G02F1/225 ,  G02F1/015

    CPC分类号： G02F1/025 ,  G02F1/0316 ,  G02F1/0356 ,  G02F1/225 ,  G02F2001/0154 ,  G02F2201/063 ,  G02F2201/122 ,  G02F2201/128

    摘要： An optical modulator has a ridge optical waveguide and a modulation electrode. The modulation electrode is composed of a signal electrode to which a modulation signal is supplied, a first ground electrode, and a second ground electrode, the signal electrode has a wide portion having a width wider than the width of the uppermost portion of the ridge optical waveguide, the first ground electrode has a central portion ground electrode component provided on a first surface so as to extend along a first direction, and the second ground electrode has a central portion ground electrode component provided on a second surface so as to extend along the first direction. The central portion ground electrode components respectively have a first and a second through-holes, and these through-holes overlap the wide portion of the signal electrode as seen in a planar view.

    摘要翻译： 光调制器具有脊形光波导和调制电极。 调制电极由提供调制信号的信号电极，第一接地电极和第二接地电极构成，信号电极具有比脊状光学器件的最上部宽度宽的宽度 第一接地电极具有沿第一方向设置在第一表面上的中心部分接地电极部件，并且第二接地电极具有设置在第二表面上的中心部分接地电极部件，以沿着第一方向延伸 第一个方向 中心部分接地电极部件分别具有第一和第二通孔，并且如平面图所示，这些通孔与信号电极的宽部分重叠。

    Electro-refraction modulator with a regrown p-n junction
    6.
    发明授权
    Electro-refraction modulator with a regrown p-n junction 有权
    具有再生长p-n结的电折射调制器

    公开(公告)号：US09470914B1

    公开(公告)日：2016-10-18

    申请号：US14807664

    申请日：2015-07-23

    申请人： Oracle International Corporation

    发明人： Stevan S. Djordjevic ,  John E. Cunningham ,  Ashok V. Krishnamoorthy

    IPC分类号： G02F1/335 ,  G02F1/025 ,  G02F1/225 ,  G02F1/015 ,  G02F1/21

    CPC分类号： G02F1/025 ,  G02F1/2257 ,  G02F2001/0153 ,  G02F2001/0154 ,  G02F2001/212

    摘要： An electro-refraction modulator includes a series of layers with different doping levels surrounding a single-crystal regrown p-n junction implemented in a silicon-on-insulator (SOI) technology. The regrown p-n junction is spatially abrupt and precisely defined, which significantly increases the tuning efficiency of the electro-refraction modulator while maintaining acceptable insertion loss. Consequently, the electro-refraction modulator (such as a resonator modulator or a Mach-Zehnder interferometer modulator) can have high bandwidth, compact size and reduced drive voltage. The improved performance of the electro-refraction modulator may facilitate silicon-photonic links for use in applications such as wavelength-division multiplexing.

    摘要翻译： 电折射调制器包括具有不同掺杂水平的一系列层，围绕在绝缘体上硅（SOI）技术中实现的单晶重新生长的p-n结。 再生长的p-n结在空间上突然和精确地限定，这显着提高了电折射调制器的调谐效率，同时保持可接受的插入损耗。 因此，电折射调制器（诸如谐振器调制器或马赫 - 曾德干涉仪调制器）可以具有高带宽，紧凑的尺寸和降低的驱动电压。 电折射调制器的改进的性能可以促进用于诸如波分复用的应用中的硅 - 光子链路。

    DIRECT-COUPLED DRIVER FOR MACH-ZEHNDER OPTICAL MODULATORS
    7.
    发明申请
    DIRECT-COUPLED DRIVER FOR MACH-ZEHNDER OPTICAL MODULATORS 有权
    用于MACH-ZEHNDER光学调制器的直接耦合驱动器

    公开(公告)号：US20150110501A1

    公开(公告)日：2015-04-23

    申请号：US14583331

    申请日：2014-12-26

    申请人： INPHI CORPORATION

    发明人： Carl POBANZ

    IPC分类号： G02F1/225 ,  H04B10/25 ,  H04L7/00

    CPC分类号： G02F1/0121 ,  G02F1/0123 ,  G02F1/025 ,  G02F1/225 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/0154 ,  G02F2001/212 ,  H04B10/25 ,  H04B10/505 ,  H04L7/0075

    摘要： An optical modulator device directly-coupled to a driver circuit device. The optical modulator device can include a transmission line electrically coupled to an internal VDD, a first electrode electrically coupled to the transmission line, a second electrode electrically coupled to the first electrode and the transmission line. A wave guide can be operably coupled to the first and second electrodes, and a driver circuit device can be directly coupled to the transmission line and the first and second electrodes. This optical modulator and the driver circuit device can be configured without back termination.

    摘要翻译： 直接耦合到驱动器电路装置的光调制器装置。 光调制器装置可以包括电耦合到内部VDD的传输线，电耦合到传输线的第一电极，电耦合到第一电极和传输线的第二电极。 波导可以可操作地耦合到第一和第二电极，并且驱动器电路装置可以直接耦合到传输线和第一和第二电极。 该光调制器和驱动器电路装置可以被配置为没有后端接。

    Method and apparatus for designing a device for electro-optical modulation of light incident upon the device
    8.
    发明授权
    Method and apparatus for designing a device for electro-optical modulation of light incident upon the device 有权
    设计用于电光调制装置的光的方法和装置

    公开(公告)号：US08225241B2

    公开(公告)日：2012-07-17

    申请号：US12267820

    申请日：2008-11-10

    申请人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

    发明人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

    IPC分类号： G06F17/50

    CPC分类号： H01L31/105 ,  B82Y20/00 ,  G02F1/015 ,  G02F1/01708 ,  G02F2001/0154 ,  G02F2201/124 ,  G02F2201/305 ,  H04N21/23424 ,  H04N21/42202 ,  H04N21/44016 ,  H04N21/44218

    摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences θi.

    摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，关断状态和导通状态的特征在于分别与施加的电压V和发生角度的角度相关联的λ/ 2的光程长度和大约零的偏移; i。

    Semiconductor light intensity modulator
    9.
    发明授权
    Semiconductor light intensity modulator 失效
    半导体光强调制器

    公开(公告)号：US5528413A

    公开(公告)日：1996-06-18

    申请号：US179712

    申请日：1994-01-11

    申请人： Eitaro Ishimura

    发明人： Eitaro Ishimura

    IPC分类号： G02F1/015 ,  G02F1/025 ,  G02F1/03

    CPC分类号： G02F1/025 ,  G02F2001/0154 ,  G02F2001/0157 ,  G02F2203/255

    摘要： A semiconductor light intensity modulator utilizing the electric field absorbing effect, includes a light absorption layer which absorbs light due to the electric field absorption effect and a phase correcting semiconductor layer to which an electric field is applied independently from the light absorption layer, having a larger energy band gap than that of the light absorption layer disposed in the light waveguide path or in the vicinity thereof, of the semiconductor light intensity modulator.In this construction, by adjusting the refractive index of the phase correcting semiconductor layer and the length of the light waveguide path, the change in the refractive index in the light absorption layer can be cancelled, whereby a semiconductor light intensity modulator free of phase modulation is obtained.

    摘要翻译： 利用电场吸收效应的半导体光强调制器包括由于电场吸收效应吸收光的光吸收层和独立于光吸收层施加电场的相位修正半导体层，具有较大的 能量带隙比设置在光波导路径中或其附近的光吸收层的能带隙高。 在这种结构中，通过调整相位校正半导体层的折射率和光波导路径的长度，可以消除光吸收层的折射率变化，由此无相位调制的半导体光强度调制器 获得。

    Semiconductor optical guided-wave device
    10.
    发明授权
    Semiconductor optical guided-wave device 失效
    半导体光导波器件

    公开(公告)号：US5455433A

    公开(公告)日：1995-10-03

    申请号：US237856

    申请日：1994-05-04

    申请人： Keiro Komatsu

    发明人： Keiro Komatsu

    IPC分类号： H01L31/14 ,  G02B6/13 ,  G02F1/015 ,  G02F1/025 ,  G02F1/225 ,  G02F1/313 ,  H01S5/00 ,  H01L33/00

    CPC分类号： G02F1/025 ,  G02B6/131 ,  G02F1/2257 ,  G02F1/3133 ,  G02F2001/0154 ,  G02F2201/063

    摘要： A semiconductor optical guided-wave device which makes quantization and integration possible and which is fine in structure and low in loss is provided, which comprises a semiconductor substrate, at least one ridge type semiconductor optical waveguide formed thereon and at least one pair of electrodes for applying an electric field to the waveguide. The ridge of the optical waveguide is formed by a selective crystal growth process.. The ridge can be realized preferably in such a method that a mask having an opening at a position where a ridge is formed is patterned to a layer on which the ridge is formed, and the crystal growth of a material for forming the ridge is made by a crystal growth technology such as the MOVPE method. The mask to be used for the crystal growth purpose is preferably a thin dielectric film such as, for example, SiO.sub.2 film. The semiconductor optical waveguide preferably comprises grown layers including a first semiconductor cladding layer, a semiconductor guiding and a second semiconductor cladding layer grown in this order and a ridge having a third semiconductor cladding layer and a semiconductor capping layer laminated in this order on the second semiconductor cladding layer.

    摘要翻译： 提供一种使得量化和集成成为可能并且结构细小且损耗低的半导体光导波装置，其包括半导体衬底，形成在其上的至少一个脊型半导体光波导和至少一对电极， 向波导施加电场。 光波导的脊通过选择性晶体生长工艺形成。该脊可以优选以这样一种方法实现，即在形成脊的位置处具有开口的掩模被图案化成其上的脊是 形成，并且通过诸如MOVPE方法的晶体生长技术来形成用于形成脊的材料的晶体生长。 用于晶体生长目的的掩模优选为例如SiO 2膜的薄电介质膜。 半导体光波导优选地包括生长层，其包括依次生长的第一半导体包覆层，半导体引导和第二半导体覆层以及在第二半导体上依次层叠有第三半导体包覆层和半导体覆盖层的脊 包层