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    Composition for wet etching of silicon dioxide
    1.
    发明授权
    Composition for wet etching of silicon dioxide 有权
    用于二氧化硅湿蚀刻的组成

    公开(公告)号：US08465662B2

    公开(公告)日：2013-06-18

    申请号：US12887026

    申请日：2010-09-21

    申请人： Jung Hun Lim ,  Dae Hyun Kim ,  Chang Jin Yoo ,  Seong Hwan Park

    发明人： Jung Hun Lim ,  Dae Hyun Kim ,  Chang Jin Yoo ,  Seong Hwan Park

    IPC分类号： C03C15/00

    CPC分类号： H01L21/31111 ,  C09K13/08

    摘要： Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.

    摘要翻译： 本发明提供一种用于以高蚀刻速率电除去二氧化硅的蚀刻组合物，更具体地，涉及含有1〜40重量％氟化氢（HF）的二氧化硅湿蚀刻用组合物。 5〜40重量％的氟化氢铵（NH4HF2）; 和水，并且还包括表面活性剂以提高二氧化硅和氮化硅膜的选择性。 由于用于二氧化硅的湿法蚀刻的组合物具有二氧化硅对氮化硅膜的高蚀刻选择性，因此有选择地除去二氧化硅。

    Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher
    6.
    发明申请
    Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher 审中-公开
    含有多晶硅抛光整理剂的化学机械抛光组合物

    公开(公告)号：US20110124195A1

    公开(公告)日：2011-05-26

    申请号：US13055322

    申请日：2009-07-22

    申请人： Hyu-Bum Park ,  Dae-Sung Kim ,  Jong-Kwan Park ,  Jung-Ryul Ahn

    发明人： Hyu-Bum Park ,  Dae-Sung Kim ,  Jong-Kwan Park ,  Jung-Ryul Ahn

    IPC分类号： H01L21/306 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： Provided are a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.

    摘要翻译： 提供了用于研磨含有多晶硅膜和绝缘体的半导体器件的化学机械抛光（CMP）组合物及其化学机械抛光方法。 CMP组合物在用于半导体器件的隔离CMP工艺中是特别有用的。 提供了一种高选择性CMP组合物，其包含多晶硅抛光整理剂，其可以选择性地抛光半导体绝缘体，因为它使用多晶硅膜作为抛光整理膜。

    CMP Slurry Composition for Copper Damascene Process
    7.
    发明申请
    CMP Slurry Composition for Copper Damascene Process 审中-公开
    用于铜镶嵌工艺的CMP浆料组合物

    公开(公告)号：US20100176335A1

    公开(公告)日：2010-07-15

    申请号：US12663433

    申请日：2007-06-08

    申请人： Seok-Ju Kim ,  Eun-Il Jeong ,  Deok-Su Han ,  Hyu-Bum Park

    发明人： Seok-Ju Kim ,  Eun-Il Jeong ,  Deok-Su Han ,  Hyu-Bum Park

    IPC分类号： C09K13/00

    CPC分类号： H01L21/7684 ,  C09G1/02 ,  H01L21/3212

    摘要： The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.

    摘要翻译： 本发明涉及一种用于半导体制造工艺的铜镶嵌工艺的CMP浆料组合物。 本发明的铜镶嵌方法的阻挡CMP浆料组合物不包含氧化剂，因此对于铜层，氧化硅膜和Ta基膜，其显示出优异的抛光性能的再现性，低蚀刻速度和适当的抛光速度。 因此，本发明的浆料组合物具有容易的凹陷或侵蚀去除，优异的分散稳定性和低的刮痕水平的优点，使其具有优异的铜镶嵌工艺的CMP浆料组合物。

    NEGATIVE PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME
    8.
    发明申请
    NEGATIVE PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME 有权
    负极光电组合物及使用其制造阵列基板的方法

    公开(公告)号：US20090176337A1

    公开(公告)日：2009-07-09

    申请号：US12345169

    申请日：2008-12-29

    申请人： Hoon KANG ,  Jae-Sung KIM ,  Yang-Ho JUNG ,  Hi-Kuk LEE ,  Yasuhiro KAMEYAMA ,  Yuuji MIZUHO ,  Jong-Cheol KIM ,  Se-Jin CHOI

    发明人： Hoon KANG ,  Jae-Sung KIM ,  Yang-Ho JUNG ,  Hi-Kuk LEE ,  Yasuhiro KAMEYAMA ,  Yuuji MIZUHO ,  Jong-Cheol KIM ,  Se-Jin CHOI

    IPC分类号： H01L21/336 ,  G03F7/004

    CPC分类号： H01L27/1288 ,  G03F7/0007 ,  G03F7/027 ,  G03F7/033 ,  H01L27/1214 ,  Y10S430/111

    摘要： A negative photoresist composition and a method of manufacturing an array substrate. The negative photoresist composition includes a photocurable composition including an ethylene unsaturated compound containing an ethylene unsaturated bond and a photopolymerization initiator, a thermosetting composition including an alkali-soluble resin crosslinked by heat and an organic solvent. The negative photoresist composition improves stability, photosensitivity, detachability after performing a developing operation and reduces residue to improve the reliability of an organic insulation layer. Furthermore, the negative photoresist composition improves the transmittance of an organic insulation layer and reduces the variation of color coordinates to improve the display quality of a display apparatus.

    摘要翻译： 负性光致抗蚀剂组合物和阵列基板的制造方法。 负性光致抗蚀剂组合物包括含有乙烯不饱和键的乙烯不饱和化合物和光聚合引发剂的光固化性组合物，包含通过热交联的碱溶性树脂和有机溶剂的热固性组合物。 负性光致抗蚀剂组合物提高了稳定性，光敏性，进行显影操作后的可剥离性，并且降低了残留物以提高有机绝缘层的可靠性。 此外，负性光致抗蚀剂组合物提高了有机绝缘层的透射率，并且减少了颜色坐标的变化，从而提高了显示装置的显示质量。

    SLURRY COMPOSITION FOR FORMING TUNGSTEN PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    9.
    发明申请
    SLURRY COMPOSITION FOR FORMING TUNGSTEN PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    用于形成图案的浆料组合物和使用其制造半导体器件的方法

    公开(公告)号：US20080096385A1

    公开(公告)日：2008-04-24

    申请号：US11862443

    申请日：2007-09-27

    申请人： Seok Kim ,  Hyu Park ,  Ki Yang ,  Gyu Jin

    发明人： Seok Kim ,  Hyu Park ,  Ki Yang ,  Gyu Jin

    IPC分类号： H01L21/4763 ,  C09K13/00 ,  C09K13/02

    CPC分类号： C09K3/1409 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

    摘要： A method for manufacturing a semiconductor device with a slurry composition for forming a tungsten pattern. The method comprises: forming a trench in an insulating film formed on a substrate; depositing a tungsten film over the insulating film including the trench; first polishing a tungsten film with a first slurry for polishing metal to expose the insulating film, the polishing selectivity ratio of the first slurry onto tungsten/insulating film being range from 30 to 100; and second polishing the insulating film and the tungsten film with a second slurry, the polishing selectivity ratio of the second slurry onto insulating film/tungsten being range from 3 to 500. The method reduces a thickness difference of tungsten patterns, thereby improving a production yield of semiconductor devices.

    摘要翻译： 一种制造具有用于形成钨图案的浆料组合物的半导体器件的方法。 该方法包括：在形成在基板上的绝缘膜中形成沟槽; 在包括沟槽的绝缘膜上沉积钨膜; 首先用用于抛光金属的第一浆料抛光钨膜以暴露绝缘膜，第一浆料对钨/绝缘膜的抛光选择率为30至100; 并用第二浆料二次抛光绝缘膜和钨膜，第二浆料在绝缘膜/钨上的抛光选择比在3〜500的范围内。该方法减小了钨图案的厚度差异，从而提高了生产率 的半导体器件。