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    BACKOFF TIMER FOR IN-BAND INTERRUPT ON AN I3C BUS
    2.
    发明申请
    BACKOFF TIMER FOR IN-BAND INTERRUPT ON AN I3C BUS 有权

    公开(公告)号：US20250165428A1

    公开(公告)日：2025-05-22

    申请号：US18513885

    申请日：2023-11-20

    Applicant: STMicroelectronics International N.V.

    Inventor： Eyuel Zewdu TEFERI

    IPC: G06F13/42

    Abstract: A process for a slave device on a serial data bus to make an in-band interrupt request to a master device includes checking whether a backoff time stored by a backoff timer has expired. When the backoff time has not expired, the slave device refrains from initiating the in-band interrupt request to the master device in response to a start condition on the serial bus. However, when the backoff time has expired, the slave device is permitted to initiate the in-band interrupt request to the master device in response to the start condition on the serial bus.

    METHOD OF MANUFACTURING THERMOELECTRIC GENERATORS
    3.
    发明申请
    METHOD OF MANUFACTURING THERMOELECTRIC GENERATORS 有权

    公开(公告)号：US20250160214A1

    公开(公告)日：2025-05-15

    申请号：US18943113

    申请日：2024-11-11

    Applicant: STMicroelectronics International N.V.

    Inventor： Antonio BELLIZZI ,  Fabrizio CREVENNA

    IPC: H10N10/01

    Abstract: A thermoelectric unit includes a thermoelectric membrane having a first surface at a cavity in a layer of first thermally conductive material. The thermoelectric membrane has a second surface opposite to the first surface with second thermally conductive material arranged in contact with the second surface of the thermoelectric membrane. The thermoelectric membrane includes thermally sensitive material configured to generate via the Seebeck effect a thermoelectric signal indicative of the temperature difference between the second thermally conductive material and the first thermally conductive material. An insulating molding compound is molded onto the second thermally conductive material arranged in contact with the second surface of the thermoelectric membrane wherein mechanical stress develops in the thermoelectric membrane in response to molding. An encapsulation is provided at the second surface of the thermoelectric membrane. The encapsulation counters mechanical stress developed in the thermoelectric membrane in response to the molding of insulating molding compound.

    PHOTONIC DEVICE AND METHOD
    4.
    发明申请
    PHOTONIC DEVICE AND METHOD 有权

    公开(公告)号：US20250155640A1

    公开(公告)日：2025-05-15

    申请号：US18922884

    申请日：2024-10-22

    Applicant: STMicroelectronics International N.V.

    Inventor： Sébastien Cremer ,  Frédéric Boeuf

    IPC: G02B6/13

    Abstract: A method of manufacturing a photonic device comprises, successively, forming on a first substrate at least one metallization level and a first bonding layer, forming on a second high-resistivity substrate a second bonding layer, bonding the first bonding layer to the second bonding layer, removing the first substrate; and forming a first optical component on the at least one metallization level. A sum of the thicknesses of the first and second bonding layers and of the thickness of the at least one metallization level is greater than 3 μm.

    BOOTSTRAP RECHARGE SYSTEM IN DUAL-SWITCH FLYBACK CONVERTERS
    8.
    发明申请
    BOOTSTRAP RECHARGE SYSTEM IN DUAL-SWITCH FLYBACK CONVERTERS 有权

    公开(公告)号：US20250149993A1

    公开(公告)日：2025-05-08

    申请号：US18386949

    申请日：2023-11-03

    Applicant: STMicroelectronics International N.V.

    Inventor： Claudio Adragna

    IPC: H02M3/335 ,  H02M1/00 ,  H02M1/08

    Abstract: According to an embodiment, a converter includes a bootstrap capacitor, a high-side switch, a low-side switch, an auxiliary switch, and a controller. The bootstrap capacitor has a first terminal coupled to a floating ground node. The high-side switch has a source terminal coupled to the bootstrap capacitor through the floating ground node. The auxiliary switch has a drain terminal coupled to the bootstrap capacitor through the floating ground node. The controller provides a first control signal to a control terminal of the high-side switch, provides a second control signal to a control terminal of the low-side switch, and provides a third control signal to a control terminal of the auxiliary switch. The third control signal is based on a condition associated with the converter after the first control signal and the second control signal deactivate the high-side switch and the low-side switch respectively.

    Electronic circuit comprising a RF switches having reduced parasitic capacitances
    10.
    发明授权
    Electronic circuit comprising a RF switches having reduced parasitic capacitances 有权

    公开(公告)号：US12293981B2

    公开(公告)日：2025-05-06

    申请号：US17733589

    申请日：2022-04-29

    Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics International N.V.

    Inventor： Stephane Monfray ,  Siddhartha Dhar ,  Alain Fleury

    IPC: H01L23/66 ,  H01L21/48 ,  H01L23/373 ,  H01L23/42 ,  G11C13/00 ,  H10N70/00

    Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

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