-
1.发明公开公开(公告)号：US20240312881A1
公开(公告)日：2024-09-19
申请号：US18674329
申请日：2024-05-24
发明人： Toshifumi ISHIDA , Kouki YAMAMOTO
IPC分类号： H01L23/495 , H01L23/00
CPC分类号： H01L23/49562 , H01L24/16 , H01L24/40 , H01L24/73 , H01L2224/16227 , H01L2224/40245 , H01L2224/73255
摘要： A power storage pack includes: a power storage cell; a power storage tab; a protection circuit substrate; a semiconductor element; and a metal plate for power storage tab joint that is connected to the semiconductor element on the first main surface of the metal plate for power storage tab joint and that includes a portion whose thickness is at most 0.2 mm. The metal plate for power storage tab joint is joined to the power storage tab on the second main surface of the metal plate for power storage tab joint to include an overlap portion in which the power storage tab, the metal plate for power storage tab joint, the semiconductor element, and the protection circuit substrate overlap each other; and there is a portion in which a region that may be the conduction path between the power storage tab and the protection circuit substrate overlaps the overlap portion.
-
公开(公告)号：US20240305225A1
公开(公告)日：2024-09-12
申请号：US18658498
申请日：2024-05-08
发明人： Daisuke FUKUDA , Noriaki EMURA
摘要： A motor driving device includes: a rotor position detector that detects a rotor position of the motor; a first waveform generator that generates a first reference waveform based on the rotor position; a second waveform generator that generates a second reference waveform based on the rotor position, the second reference waveform being different from the first reference waveform; a waveform outputter that outputs, as an output waveform, the first reference waveform, the second reference waveform, or a composite waveform of the first reference waveform and the second reference waveform, based on the torque command value; and a current supplier that supplies, to the motor, a motor current generated based on the output waveform. In the motor driving device, the waveform outputter changes a composite ratio between the first reference waveform and the second reference waveform in the composite waveform, according to the torque command value.
-
公开(公告)号：US12080664B2
公开(公告)日：2024-09-03
申请号：US18477224
申请日：2023-09-28
IPC分类号： H01L23/00 , H01L25/065 , H01L29/78
CPC分类号： H01L24/06 , H01L24/08 , H01L25/0655 , H01L29/7813 , H01L2224/06152 , H01L2224/08225
摘要： A semiconductor device includes: a semiconductor layer; first and second transistors; one or more first source pads and a first gate pad of the first transistor in a first region of the upper surface of the semiconductor layer; and one or more second source pads and a second gate pad of the second transistor in a second region of the upper surface adjacent to the first region in a plan view of the semiconductor layer. In a plan view of the semiconductor layer, a virtual straight line connecting the centers of the first and second gate pads passes through the center of the semiconductor layer and forms a 45 degree angle with each side of the semiconductor layer. An upper surface boundary line between the first and second regions monotonically changes in the directions of extension of the longer and shorter sides of the semiconductor layer.
-
公开(公告)号：US20240272106A1
公开(公告)日：2024-08-15
申请号：US18604130
申请日：2024-03-13
发明人： Ken KAWAI , Kazunari HOMMA , Koji KATAYAMA
CPC分类号： G01N27/122 , G01N33/0031 , G01N33/005 , G01N33/0073
摘要： A hydrogen detection device includes a hydrogen sensor and a detection circuit, wherein the hydrogen sensor includes: a first electrode; a second electrode; a metal oxide layer; a first insulating film (insulating film); a first terminal and a second terminal that are connected, through a via, to an other surface of the second electrode opposite a principal surface of the second electrode; and a third terminal connected, through a via, to an other surface of the first electrode opposite a principal surface of the first electrode, and the detection circuit includes: an ammeter that measures (1) a first resistance value between the first terminal and the second terminal and (2) a second resistance value between the third terminal and at least one of the first terminal or the second terminal; and a control circuit that selectively outputs one of the first resistance value or the second resistance value.
-
公开(公告)号：US12062930B2
公开(公告)日：2024-08-13
申请号：US17185456
申请日：2021-02-25
发明人： Hitoshi Kobayashi
IPC分类号： H02J7/00 , G01R31/3835 , G01R31/396 , H01M10/48 , B60L58/22
CPC分类号： H02J7/0014 , G01R31/3835 , G01R31/396 , H01M10/48 , H02J7/00032 , H02J7/0048 , B60L58/22 , H02J7/0063
摘要： A cell supervising circuit includes: a measurement circuit which measures a state of charge of a secondary battery cell; a transformer which is provided for the measurement circuit to contactlessly receive power supply from a power source different from the secondary battery cell; and a communication circuit which transmits, via the transformer to a BMU which manages a status of a battery pack, the state of charge measured by the measurement circuit.
-
公开(公告)号：US12051688B2
公开(公告)日：2024-07-30
申请号：US18261796
申请日：2022-09-27
IPC分类号： H01L27/02 , H01L29/06 , H01L29/78 , H01L29/866
CPC分类号： H01L27/0255 , H01L29/0692 , H01L29/7808 , H01L29/866
摘要： A semiconductor device manufacturing method includes: forming a first groove having depth H in a semiconductor layer; filling the first groove with an oxide film and forming a surface oxide film having thickness a on an upper surface of the semiconductor layer to equalize the oxide film and the surface oxide film in height; forming a second groove having depth h greater than thickness a, from an uppermost surface of a third oxide film; forming gate trenches deeper than depth H, in the semiconductor layer; depositing polysilicon until at least the gate trenches and the second groove are filled with polysilicon; forming a peripheral element by injecting an impurity into polysilicon deposited in the second groove; and making a thickness of the peripheral element equal to depth h by concurrently removing polysilicon deposited in the gate trenches and polysilicon deposited in the second groove until they become equal in height.
-
公开(公告)号：US20240250209A1
公开(公告)日：2024-07-25
申请号：US18583573
申请日：2024-02-21
发明人： Yasutoshi KAWAGUCHI , Shinji YOSHIDA , Takahiro OKAGUCHI , Shuichi NAKAZAWA , Shigeo HAYASHI , Masayuki HATA
CPC分类号： H01L33/145 , H01L33/32
摘要： A nitride semiconductor light-emitting element includes: an n-side semiconductor layer; one or more light-emitting layers disposed above the n-side semiconductor layer; a first barrier layer disposed above the one or more light-emitting layers and including Al; a second barrier layer disposed above the first barrier layer and including Al; a p-side guiding layer disposed above the second barrier layer and having an Al composition ratio smaller than an Al composition ratio of the second barrier layer; an electron blocking layer disposed above the p-side guiding layer, including Mg, and having an Al composition ratio larger than the Al composition ratio of the second barrier layer; and a p-side semiconductor layer disposed above the electron blocking layer.
-
公开(公告)号：US20240222820A1
公开(公告)日：2024-07-04
申请号：US18602691
申请日：2024-03-12
发明人： Naohisa HATANI , Toshiaki OZEKI , Goro MORI
IPC分类号： H01M50/569 , H01M10/48 , H01M50/51
CPC分类号： H01M50/569 , H01M10/482 , H01M50/51
摘要： A voltage measurement device individually detects, in a cell stack of n (n is an integer greater than or equal to two) battery cells connected in series, a voltage of each of the n battery cells, and includes: n+1 resistor elements, first terminals of which are connected to a positive electrode of an upper-end battery cell among the n battery cells, a negative electrode of a lower-end battery cell among the n battery cells, and connection points between the n battery cells; n+1 capacitors, first terminals of which are respectively connected to second terminals of the n+1 resistor elements; and a voltage measurer connected to the second terminals of the n+1 resistor elements. Second terminals of two or more capacitors among the n+1 capacitors are connected to a positive electrode of a k-th battery cell (k is an integer; 1≤k≤n−1) among the n battery cells.
-
公开(公告)号：US12002914B2
公开(公告)日：2024-06-04
申请号：US17570203
申请日：2022-01-06
发明人： Yasutomo Mitsui , Yasumitsu Kunoh , Masanori Hiroki , Shigeo Hayashi , Masahiro Kume , Masanobu Nogome
CPC分类号： H01L33/62 , H01L33/382 , H01L33/486
摘要： A semiconductor light-emitting element includes: a semiconductor stack including an n-type layer and a p-type layer and having at least one n exposure portion being a recess where the n-type layer is exposed; a p wiring electrode layer on the p-type layer; an insulating layer (i) continuously covering inner lateral surfaces of at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) having an opening portion that exposes the n-type layer; an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer and in contact with the n-type layer in the opening portion; and at least one first n connecting member connected to the n wiring electrode layer in at least one first n terminal region. The n wiring electrode layer and the p-type layer are disposed below at least one first n terminal region.
-
公开(公告)号：US20240163579A1
公开(公告)日：2024-05-16
申请号：US18526611
申请日：2023-12-01
发明人： Norihiko SUMITANI , Hiroshi FUJINAKA , Yutaka ABE , Takayasu KITO
IPC分类号： H04N25/68 , H04N25/771 , H04N25/78
CPC分类号： H04N25/68 , H04N25/771 , H04N25/78
摘要： A solid-state imaging device includes: a plurality of pixel circuits arranged in rows and columns; a plurality of selector circuits that each receive, as inputs, two pixel signals corresponding to two columns different from each other; k column AD conversion circuits that perform AD conversion on pixel signals output from the plurality of selector circuits, k being an integer greater than or equal to two; and m column AD conversion circuits that are provided redundantly. In the solid-state imaging device, the plurality of selector circuits selectively exclude, from among the k column AD conversion circuits and the m column AD conversion circuits, m column AD conversion circuits corresponding to m columns adjacent to each other, and associate k pixel signals output from the plurality of pixel circuits with k column AD conversion circuits which have not been excluded.
-
-
-
-
-
-
-
-
-
搜索结果
231 条记录 (耗时 0.026 秒)
