公开(公告)号：US07122842B2

公开(公告)日：2006-10-17

申请号：US10896069

申请日：2004-07-22

申请人： Steven E. Hill

发明人： Steven E. Hill

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  C09K11/77 ,  F21K9/00 ,  H01L33/18 ,  Y02B20/181

摘要： A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of rare-earth doped silicon and/or silicon carbide nanocrystals that are either combined in a single layer or in individual layers that produce the required Red, Green, and Blue (RGB) emission to form a white light.

摘要翻译： 一种发光组件，包括可与电源相连的固态器件，所述电源构造和布置成为固态器件供电以从固态器件发射。 一系列稀土掺杂的硅和/或碳化硅纳米晶体，其组合在单层或单层中，产生所需的红，绿和蓝（RGB）发射以形成白光。

公开(公告)号：US08232611B2

公开(公告)日：2012-07-31

申请号：US12814712

申请日：2010-06-14

申请人： Carla Miner ,  Thomas MacElwee ,  Marwan Albarghouti

发明人： Carla Miner ,  Thomas MacElwee ,  Marwan Albarghouti

IPC分类号： H01L29/78 ,  H01L29/788

CPC分类号： H01L21/28273 ,  H01L27/11521 ,  H01L29/51 ,  H01L29/7881

摘要： Improved high quality gate dielectrics and methods of preparing such dielectrics are provided. Preferred dielectrics comprise a rare earth doped dielectric such as silicon dioxide or silicon oxynitride. In particular, cerium doped silicon dioxide shows an unexpectedly high charge-to-breakdown QBD, believed to be due to conversion of excess hot electron energy as photons, which reduces deleterious hot electron effects such as creation of traps or other damage. Rare earth doped dielectrics therefore have particular application as gate dielectrics or gate insulators for semiconductor devices such as floating gate MOSFETs, as used in as flash memories, which rely on electron injection and charge transfer and storage.

摘要翻译： 提供了改进的高质量栅极电介质和制备这种电介质的方法。 优选的电介质包括掺杂稀土的电介质，例如二氧化硅或氮氧化硅。 特别地，铈掺杂的二氧化硅显示出意想不到的高电荷分解QBD，被认为是由于作为光子的过量热电子能的转化，这减少了有害的热电子效应，例如产生陷阱或其他损害。 因此，稀土掺杂电介质具有特别的用途，作为半导体器件的栅极电介质或栅极绝缘体，例如浮动栅极MOSFET，其用作闪存，其依赖于电子注入和电荷转移和存储。

公开(公告)号：US07923925B2

公开(公告)日：2011-04-12

申请号：US12273972

申请日：2008-11-19

申请人： Thomas MacElwee ,  Jean-Paul Noel ,  Dean Ducharme ,  Yongbao Xin

发明人： Thomas MacElwee ,  Jean-Paul Noel ,  Dean Ducharme ,  Yongbao Xin

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L33/02 ,  H01L33/42

摘要： Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.

摘要翻译： 提供电致发光（EL）器件结构，其包括热电子阻挡层结构以捕获热电子并耗散其能量，从而减少对透明导电氧化物（TCO）层的损伤并减少其他热电子效应，例如充电效应，其影响 EL器件结构的可靠性。 阻挡层结构可以包括设置在TCO电极层和发射极结构之间的单层或多层，并且还可以起到减少TCO和发射极层结构之间的扩散或化学相互作用的作用。 可选地，也可以在发射器结构内设置阻挡层。 合适的阻挡层材料是宽带隙半导体或电介质，优选在由EL器件发射的波长处是透明的，其特征在于高冲击电离速率和/或相对于发射极结构的相邻层的高相对介电常数。

公开(公告)号：US07679102B2

公开(公告)日：2010-03-16

申请号：US11642786

申请日：2006-12-21

申请人： George Chik ,  Thomas MacElwee ,  Iain Calder ,  E. Steven Hill ,  Peter Mascher ,  Jacek Wojcik

发明人： George Chik ,  Thomas MacElwee ,  Iain Calder ,  E. Steven Hill ,  Peter Mascher ,  Jacek Wojcik

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00

CPC分类号： H05B33/145 ,  B82Y20/00 ,  H01L33/18 ,  H05B33/22

摘要： A solid state light emitting device comprises one or more active layers comprising semiconductor nano-particles in a host matrix, e.g. silicon nano-particles in silicon dioxide or silicon nitride. The incorporation of carbon in the active layers provides a great improvement in performance through shortened decay time and enhance emission spectra, as well as reliability and lifetime. The emission wavelengths from the nano-particles can be made to correspond to the quantization energy of the semiconductor nano-particles, which allows the entire visible range of the spectrum be covered. Ideally an engineered structure of alternating active and buffer material layers are disposed between AC or DC electrodes, which generate an electric field. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and are designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the nano-particles in the adjacent active layer at a sufficient excitation energy to emit light efficiently at a desired wavelength.

摘要翻译： 固态发光器件包括一个或多个活性层，其包含主体基质中的半导体纳米颗粒， 硅纳米颗粒在二氧化硅或氮化硅中。 通过缩短衰减时间和增强发射光谱以及可靠性和寿命，在活性层中引入碳提供了很大的性能提高。 可以使来自纳米颗粒的发射波长对应于半导体纳米颗粒的量子化能量，这允许覆盖光谱的整个可见光范围。 理想地，交替的有源和缓冲材料层的工程结构设置在产生电场的AC或DC电极之间。 缓冲层由宽带隙半导体或电介质材料组成，并且被设计成沿所施加的电场的方向具有厚度，以确保通过其的电子通过其吸收足够的能量来激发相邻活性物质中的纳米颗粒 层以足够的激发能量以期望的波长有效发光。

公开(公告)号：US07616272B2

公开(公告)日：2009-11-10

申请号：US11840511

申请日：2007-08-17

申请人： Carla Miner ,  Thomas MacElwee ,  Stephen Naor ,  Howard Tweddle

发明人： Carla Miner ,  Thomas MacElwee ,  Stephen Naor ,  Howard Tweddle

IPC分类号： G02F1/1335

CPC分类号： G02F1/133621 ,  G02F1/133602 ,  G02F1/133603 ,  G02F2001/133622 ,  G02F2201/44

摘要： The present invention replaces the conventional cold cathode fluorescent tubes used in backlighting units of liquid crystal displays with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing full color capabilities. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

摘要翻译： 本发明将用于液晶显示器的背光单元的常规冷阴极荧光管用集成的电致发光膜结构代替，被分为电隔离的微面板。 理想地，电致发光结构包括提供全色能力的单独的红色，绿色和蓝色微型面板。 或者，电致发光膜结构包括堆叠的层组，其中每组发射不同的颜色并且是独立可控的。

公开(公告)号：US20060065943A1

公开(公告)日：2006-03-30

申请号：US11229220

申请日：2005-09-16

申请人： E. Hill

发明人： E. Hill

IPC分类号： H01L31/00

CPC分类号： H05B33/145 ,  F21K9/00 ,  H05B33/22 ,  H05B33/28

摘要： Group IV semiconductor nanocrystal doped with rare earths or other light emitting metal to form alternating current solid-state devices that can be designed to operate at a variety of voltages including line voltages. The semiconductor nanocrystals are preferably silicon, silicon carbide, germanium or germanium carbide, and the electric luminescent device may have an upper and lower thin coat of a semiconductor nanocrystal glass material in turn connected to alternating current electrodes. The present invention enables one to fabricate a solid-state light that can use standard fixtures, e.g. Edison type, and standard AC voltages and frequencies for use in houses and businesses without refurbishing the installed lighting fixtures.

摘要翻译： 掺杂有稀土或其他发光金属的IV族半导体纳米晶体以形成可被设计为在包括线路电压的各种电压下操作的交流固态器件。 半导体纳米晶体优选为硅，碳化硅，锗或碳化锗，并且电致发光器件可以具有半导体纳米晶体玻璃材料的上下薄膜，然后又连接到交流电极。 本发明使得能够制造可以使用标准夹具的固态光，例如， 爱迪生型，以及用于房屋和企业的标准交流电压和频率，无需重新安装照明灯具。

公开(公告)号：US07888686B2

公开(公告)日：2011-02-15

申请号：US12015285

申请日：2008-01-16

申请人： George Chik ,  Thomas MacElwee ,  Iain Calder ,  E. Steven Hill

发明人： George Chik ,  Thomas MacElwee ,  Iain Calder ,  E. Steven Hill

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H05B33/22

摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.

摘要翻译： 发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如， 具有半导体纳米颗粒的宽带隙材料沉积在衬底上。 为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。 在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。 因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并且减少了有害的 大电场的影响。

公开(公告)号：US20120322181A1

公开(公告)日：2012-12-20

申请号：US13581281

申请日：2010-03-01

申请人： Jean-Paul Noel ,  Ming Li

发明人： Jean-Paul Noel ,  Ming Li

IPC分类号： H01L33/44

CPC分类号： H01L21/02164 ,  C23C16/0218 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02312 ,  H01L21/02337 ,  H05B33/10

摘要： A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.

摘要翻译： 公开了一种用于沉积薄膜电介质的方法，特别是用于化学气相沉积包括多层电介质的纳米层结构，例如二氧化硅，氮化硅，氮氧化硅和/或其它与硅相容的电介质。 该方法包括用金属或半导体源气体沉积表面处理沉积层，例如， 硅源气体。 含硅电介质的沉积优选包括用于沉积掺杂或未掺杂的电介质层的硅烷基化学，以及用硅烷表面处理沉积的介电层。 表面处理提供具有改进的层间均匀性和横向连续性的电介质层，以及适用于电致发光发光结构的多层结构的基本上原子平坦的电介质层。 含有含稀土的发光中心的活性层。 也可以为其它半导体器件提供掺杂或未掺杂的电介质薄膜或纳米层介电结构。

公开(公告)号：US08198638B2

公开(公告)日：2012-06-12

申请号：US12835810

申请日：2010-07-14

申请人： Thomas MacElwee ,  Alasdair Rankin

发明人： Thomas MacElwee ,  Alasdair Rankin

IPC分类号： H01L33/06 ,  H01L21/00

CPC分类号： H05B33/26 ,  H01L33/06 ,  H01L33/24 ,  H01L33/26 ,  H01L33/42 ,  H01L33/54 ,  H05B33/10

摘要： A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g. for solid-state lighting applications, may therefore be provided with improved process flexibility and reliability.

摘要翻译： 一种发光器件结构，其中发射极层结构包括由厚场氧化物区域限定的一个或多个器件阱，并且提供其制造方法。 优选地，通过在沉积发射极层结构之后限定器件阱区，可以提供具有减小的形貌的发射极层结构，便于加工并改善层间均匀性。 该方法特别适用于多层发射极层结构，例如。 包括有源层/漂移层对的层叠。 优选地，有源层包括稀土氧化物或稀土掺杂电介质，例如二氧化硅，氮化硅或氮氧化硅，并且相应的漂移层包括适当的电介质，优选二氧化硅，其具有适当的厚度以控制激发能。 像素化发光结构或大面积高亮度发射极层结构，例如， 因此，对于固态照明应用，可以提供改进的工艺灵活性和可靠性。

公开(公告)号：US08089080B2

公开(公告)日：2012-01-03

申请号：US12508033

申请日：2009-07-23

申请人： Iain Calder ,  Carla Miner ,  George Chik ,  Thomas Macelwee

发明人： Iain Calder ,  Carla Miner ,  George Chik ,  Thomas Macelwee

IPC分类号： H01L33/00

CPC分类号： H05B33/145 ,  H05B33/22

摘要： Electroluminescent (EL) light emitting structures comprises one or more active layers comprising rare earth luminescent centers in a host matrix for emitting light of a particular color or wavelength and electrodes for application of an electric field and current injection for excitation of light emission. The host matrix is preferably a dielectric containing the rare earth luminescent centers, e.g. rare earth doped silicon dioxide, silicon nitride, silicon oxynitrides, alumina, dielectrics of the general formula SiaAlbOcNd, or rare earth oxides. For efficient impact excitation, corresponding drift layers adjacent each active layer have a thickness related to a respective excitation energy of an adjacent active layer. A stack of active layers emitting different colors may be combined to provide white light. For rare earth species having a host dependent emission spectrum, spectral emission of the stack may be tuned by appropriate selection of a different host matrix in successive active layers.

摘要翻译： 电致发光（EL）发光结构包括在主体矩阵中包含用于发射特定颜色或波长的光的包含稀土发光中心的一个或多个有源层，以及用于施加电场的电极和用于激发光发射的电流注入。 主体基质优选是含有稀土发光中心的电介质，例如 稀土掺杂二氧化硅，氮化硅，氮氧化硅，氧化铝，通式为SiaAlbOcNd的电介质，或稀土氧化物。 对于有效的冲击激励，与每个有源层相邻的对应漂移层具有与相邻有源层的相应激发能相关的厚度。 可以组合发射不同颜色的一堆有源层以提供白光。 对于具有主体依赖性发射光谱的稀土物质，可以通过在连续的有源层中适当地选择不同的主体矩阵来调整堆叠的光谱发射。