SUBSTANCE COMPONENT DETECTION APPARATUS AND METHOD

    公开(公告)号:US20250044224A1

    公开(公告)日:2025-02-06

    申请号:US18920671

    申请日:2024-10-18

    Abstract: A substance component detection apparatus and a method are provided to reduce absorption of an infrared signal by a window medium, thereby obtaining abundant fingerprint region signals. The apparatus includes: a sample pool, an infrared optical window, an infrared light source, and a detector. The infrared optical window has a first surface that faces an inner side of the sample pool and that is configured to be in contact with a to-be-detected substance, and a second surface exposed on an outer side of the sample pool. A protruding portion is formed between two adjacent grooves on the second surface, and any protruding portion has an incident surface and an emergent surface. An infrared signal emitted by the infrared light source is irradiated on the incident surface. The detector determines a component of the to-be-detected substance and/or content of the component.

    Multi-layered micro-channel mixer and method for mixing fluids

    公开(公告)号:US12194428B2

    公开(公告)日:2025-01-14

    申请号:US17467377

    申请日:2021-09-06

    Abstract: A multi-layered micro-channel mixer includes a base plate and a cover plate. Two inlet fluid reservoirs, two inlet channels, two groups of fluid distribution channel networks, two groups of process fluid channels, an impinging stream mixing chamber, a fluid mixing intensification channel and an outlet buffer reservoir are provided on the base plate. Two fluids are fed into the two inlet fluid reservoirs, respectively. The fluids then flow into the process fluid channels via the inlet channels and the multi-stage fluid distribution channel networks, respectively. Then the two fluid streams ejected from the opposing process fluid channels impinges upon each other in the impinging stream mixing chamber. The mixed fluid is subjected to vortex or secondary flow generated by the baffles or the internals in the impinging stream mixing chamber and fluid mixing intensification channel, and finally the mixed fluid is discharged through the outlet buffer reservoir.

    FERROELECTRIC FIELD MODULATED POSITIVE AND NEGATIVE PHOTO-RESPONSE DETECTOR, PREPARATION METHOD AND APPLICATION THEREOF

    公开(公告)号:US20240321999A1

    公开(公告)日:2024-09-26

    申请号:US18024277

    申请日:2022-07-08

    CPC classification number: H01L29/516 G06N3/06 H01L31/1136 H01L31/18

    Abstract: The present invention relates to a photo-response detector, in particular to a ferroelectric field modulated positive and negative photo-response detector, a preparation method and application thereof. The ferroelectric field modulated positive and negative photo-response detector includes a substrate, a gate electrode, a ferroelectric layer, a low-dimensional semiconductor and a source-drain electrode. A pair of gate electrodes are provided and fixedly arranged on the substrate at intervals. The ferroelectric layer is fixedly arranged on the substrate and completely covers the gate electrode. The low-dimensional semiconductor is fixedly arranged on the ferroelectric layer. The source-drain electrode includes a source electrode and a drain electrode separately arranged on two sides of the low-dimensional semiconductor and fixedly arranged on the ferroelectric layer.

    METHOD FOR PREPARING WAFER-SCALE TWO-DIMENSIONAL MATERIAL ARRAYS

    公开(公告)号:US20240321578A1

    公开(公告)日:2024-09-26

    申请号:US18680924

    申请日:2024-05-31

    Abstract: A method for preparing a wafer-scale two-dimensional (2D) material array includes the following steps. Water and alcohol solvent are mixed to obtain a mixed solution. A polydimethylsiloxane (PDMS) stamp with micro posts is prepared. A monolayer two-dimensional transition metal dichalcogenides (2D-TMDs) film is continuously grown on a growth substrate. The PDMS stamp is put upside down to allow the micro posts to adhere to the monolayer 2D-TMDs film, so as to obtain a PDMS stamp-2D-TMDs film-growth substrate combination. The PDMS stamp-2D-TMDs film-growth substrate combination is immersed in the mixed solution to separate the monolayer 2D-TMDs film from the growth substrate. A portion of the monolayer 2D-TMDs film which is not in contact with upper surfaces of the micro posts is removed to obtain a patterned 2D-TMDs film. The patterned 2D-TMDs film is transferred to a target substrate to obtain the wafer-scale 2D material array.

    Drive module for GaN transistor, switch circuit and electronic device

    公开(公告)号:US12009809B2

    公开(公告)日:2024-06-11

    申请号:US17828800

    申请日:2022-05-31

    CPC classification number: H03K17/161

    Abstract: The present invention provides a drive module for a GaN transistor, including: a first pull-down transistor and a gate ringing and overshoot suppression unit, where the gate ringing and overshoot suppression unit and a first end of the first pull-down transistor are directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is connected between a second end of the first pull-down transistor and the ground; the gate ringing and overshoot suppression unit is configured to: when a gate voltage of the GaN transistor drops, control the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold; and control the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, where the first impedance is less than the second impedance.

    Through silicon via structure for three-dimensional integrated circuit packaging and manufacturing method thereof

    公开(公告)号:US11887912B2

    公开(公告)日:2024-01-30

    申请号:US17052853

    申请日:2020-07-02

    CPC classification number: H01L23/481 H01L21/76841 H01L21/76898

    Abstract: The present disclosure belongs to the technical field of integrated circuit packaging, and specifically relates to a through silicon via structure for three-dimensional integrated circuit packaging and a manufacturing method thereof. The method of the present disclosure includes the following steps: lifting off a silicon wafer by implanting hydrogen ions into the silicon wafer to obtain a substrate for making a through silicon via; performing double-sided plasma etching on the substrate to form a through silicon via penetrating the substrate; depositing an insulating medium, a copper diffusion barrier layer, and a seed layer; and removing parts of the copper diffusion barrier layer and the seed layer by photolithography and etching processes, leaving only parts of the copper diffusion barrier layer and the seed layer on a sidewall of the through silicon via; forming a sacrificial layer on the upper and lower surfaces of the resulting structure, completely filling in the through silicon via with conductive metal material, and then removing the sacrificial layer, upper and lower surfaces of the conductive metal material respectively protruding from upper and lower surfaces of the insulating medium; and forming a contact pad on a surface of the conductive metal material. The present disclosure can effectively improve production efficiency and lower the cost.

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