公开(公告)号：US20230005900A1

公开(公告)日：2023-01-05

申请号：US17855015

申请日：2022-06-30

申请人： iReach Corporation

发明人： Hsiu-Ju YANG ,  Hsin-Chan CHUNG ,  Shou-Lung CHEN ,  Chi-Hsun HSIEH

IPC分类号： H01L25/16 ,  A61N1/39 ,  H01L33/62 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/048 ,  H01L33/48 ,  H01L31/024 ,  H01L31/052 ,  H01L31/0224 ,  H01L33/64 ,  H01S5/024 ,  H01S5/02345 ,  H01S5/02315 ,  H01S5/02355

摘要： A chip package structure includes a substrate having a first surface and a second surface being opposite surfaces of the substrate; a housing disposed on the first surface of the substrate and enclosing a chip region; and a chip set disposed in the chip region and electrically connected to the substrate. The chip set includes a first chip and a second chip, and an active surface of the second chip faces the active surface of the first chip.

公开(公告)号：US20230155349A1

公开(公告)日：2023-05-18

申请号：US18053393

申请日：2022-11-08

申请人： iReach Corporation

发明人： Shou-Lung CHEN ,  Hsin-Chan CHUNG ,  Tzu-Chieh HSU ,  Chi-Hsun HSIEH

IPC分类号： H01S5/042 ,  H01S5/183

CPC分类号： H01S5/04256 ,  H01S5/18344

摘要： A semiconductor light emitting device includes a substrate, a first epitaxial structure and a second epitaxial structure, a connecting layer, a first electrode structure, a second electrode structure, and a third electrode structure. The first epitaxial structure and the second epitaxial structure are on the substrate side by side. The connecting layer is between the first epitaxial structure and the substrate, between the second epitaxial structure and the substrate, and between the first epitaxial structure and the second epitaxial structure. The first electrode structure is on the first epitaxial structure away from the substrate. The second electrode structure is on the second epitaxial structure away from the substrate. The third electrode structure is connected to the connecting layer.

公开(公告)号：US20220158413A1

公开(公告)日：2022-05-19

申请号：US17526024

申请日：2021-11-15

申请人： iReach Corporation

发明人： Bing-Cheng LIN ,  Shou-Lung CHEN ,  Chi-Hsun HSIEH ,  Hsin-Chan CHUNG

IPC分类号： H01S5/183

摘要： A semiconductor laser includes a base, an epitaxial structure on the base, and a first electrode and a second electrode on the epitaxial structure. The epitaxial structure includes a first semiconductor structure on the base, a second semiconductor structure on the first semiconductor structure, an intermediate layer on the second semiconductor structure, a third semiconductor structure on the intermediate layer, a current-confining layer in the third semiconductor structure, a fourth semiconductor structure on the third semiconductor structure, and an active structure between the third semiconductor structure and the fourth semiconductor structure. The first electrode and the second electrode are on the fourth semiconductor structure, wherein a part of the first electrode passes through the fourth semiconductor structure, the active structure, the current-confining layer and the third semiconductor structure and is connected to the intermediate layer.