公开(公告)号：US20240292644A1

公开(公告)日：2024-08-29

申请号：US18576760

申请日：2022-07-12

申请人： ZHEJIANG UNIVERSITY ,  Najing Technology Corporation Limited

发明人： Xiaogang PENG ,  Xing LIN ,  Xingliang DAI

IPC分类号： H10K50/115 ,  H10K101/60

CPC分类号： H10K50/115 ,  H10K2101/60

摘要： A light-emitting device and method for using quantum dot LEDs are provided in the present application. The light-emitting device includes at least one quantum dot LED, wherein the quantum dot LED includes a first electrode, an electron transport layer, a quantum dot layer, a hole transport layer, and a second electrode which are sequentially stacked; a fluorescence quantum yield of quantum dots in the quantum dot layer is equal to or greater than 50%; a ratio of an average photon voltage to an operating voltage of the quantum dot LED is equal to or greater than 1; electroluminescence of the quantum dot LED includes thermoelectrically-assisted up-conversion luminescence. The quantum dot LED can achieve higher external power conversion efficiency in the light-emitting device.

公开(公告)号：US20200318002A1

公开(公告)日：2020-10-08

申请号：US16303149

申请日：2016-11-01

申请人： ZHEJIANG UNIVERSITY ,  NAJING TECHNOLOGY CORPORATION LIMITED

发明人： Xiaogang PENG ,  Yang LI

IPC分类号： C09K11/08 ,  C09K11/88 ,  C09K11/74 ,  H01L51/50

摘要： This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120° C. and 200° C.

公开(公告)号：US20240309271A1

公开(公告)日：2024-09-19

申请号：US18277785

申请日：2022-02-17

申请人： ZHEJIANG UNIVERSITY ,  NAJING TECHNOLOGY CORPORATION LIMITED

发明人： Xiaogang PENG ,  Lin HUANG ,  Jiongzhao LI

IPC分类号： C09K11/88 ,  C30B25/02

CPC分类号： C09K11/883 ,  C30B25/02

摘要： The present disclosure provides a population of alloy nanocrystals, a population of core-shell nanocrystals, and a synthesis method therefor, a composition comprising same, and an electronic device. The population of alloy nanocrystals comprises a plurality of alloy nanocrystals, wherein each of the alloy nanocrystals comprises a first group II element, a second group II element, and a first group VI element, the population of alloy nanocrystals has a Raman peak with a full-width-at-half-maximum of less than or equal to 15 cm−1, and the alloy nanocrystals have an average size greater than a diameter of an exciton of a corresponding bulk alloy compound. The population of alloy nanocrystals has an excellent narrow full-width-at-half-maximum.

公开(公告)号：US20240076543A1

公开(公告)日：2024-03-07

申请号：US18241994

申请日：2023-09-04

申请人： ZHEJIANG UNIVERSITY ,  Najing Technology Corporation Limited

发明人： Xiaogang PENG ,  Liulin LYU ,  Jiongzhao LI ,  Shaojie LIU

IPC分类号： C09K11/08 ,  H01L31/036

CPC分类号： C09K11/0811 ,  H01L31/036

摘要： The present disclosure provides a weakly-confined semiconductor nanocrystal, a preparation method therefor and use thereof. A size of the nanocrystals is larger than an exciton diameter thereof; excitons in the nanocrystal are dynamic excitons, electron-hole Coulomb interaction of the dynamic excitons is insufficient to bind electrons and holes into stable bound excitons at operating temperatures, and the electrons and the holes of the dynamic excitons are constrained by boundaries of the nanocrystal. Since the excitons in the weakly-confined nanocrystals herein possess the characteristics of dynamic excitons, the nanocrystals herein possess unique optical and photoelectric properties distinct from conventional semiconductor nanomaterials. It holds unique value for applications requiring broad-spectrum emission (such as lighting) and significant importance for photovoltaic solar devices, photoelectric detectors, and photocatalysis.

公开(公告)号：US20210380878A1

公开(公告)日：2021-12-09

申请号：US17285947

申请日：2019-09-05

申请人： Zhejiang University ,  Najing Technology Corporation Limited

发明人： Xiaogang PENG ,  Chaodan PU ,  Yizheng JIN

IPC分类号： C09K11/02 ,  C09K11/88 ,  H01L51/00

摘要： Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.