摘要:
For the purpose of repeatedly observing the bottom of a contact hole with a high aspect ratio, the potential of an electrostatic charge in each of a pattern to be observed and a vicinity of a range to be observed is stabilized by pre-charging a range on which to irradiate a beam of electrons while changing the range on a step-by-step basis.
摘要:
For the purpose of repeatedly observing the bottom of a contact hole with a high aspect ratio, the potential of an electrostatic charge in each of a pattern to be observed and a vicinity of a range to be observed is stabilized by pre-charging a range on which to irradiate a beam of electrons while changing the range on a step-by-step basis.
摘要:
An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.
摘要:
An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.
摘要:
An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis.
摘要:
As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
摘要:
As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
摘要:
As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
摘要:
As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
摘要:
In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image.