公开(公告)号：US07005649B1

公开(公告)日：2006-02-28

申请号：US10971786

申请日：2004-10-21

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01J1/42

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

公开(公告)号：US07220969B2

公开(公告)日：2007-05-22

申请号：US11299202

申请日：2005-12-09

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01J1/42

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

公开(公告)号：US20060054836A1

公开(公告)日：2006-03-16

申请号：US10971786

申请日：2004-10-21

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01N21/55

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

公开(公告)号：US20060138338A1

公开(公告)日：2006-06-29

申请号：US11299202

申请日：2005-12-09

申请人： Yoshihiro Tezuka ,  Masaaki Ito

发明人： Yoshihiro Tezuka ,  Masaaki Ito

IPC分类号： G01J1/42

CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676

摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.

摘要翻译： 实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。 可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。 归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。 可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

公开(公告)号：US20140198321A1

公开(公告)日：2014-07-17

申请号：US14240669

申请日：2012-07-27

申请人： Masaaki Ito ,  Takahiro Jingu ,  Hisashi Hatano

发明人： Masaaki Ito ,  Takahiro Jingu ,  Hisashi Hatano

IPC分类号： G01B11/24 ,  G01N21/55

CPC分类号： G01B11/303 ,  G01B11/24 ,  G01B2210/56 ,  G01N21/4738 ,  G01N21/55 ,  G01N21/9501 ,  G01N2201/12

摘要： In related art, consideration is not given to that a spatial distribution of scattered light changes in various direction such as forward/backward/sideways according to a difference in micro roughness. Particularly, although a step-terrace structure appearing on an epitaxial growth wafer produces anisotropy in the scattered light distribution, consideration is not given to this point in the related art. The invention includes a process in which light is illuminated to a sample surface, plural detection optical systems mutually different in directions of optical axes detect a spatial distribution of scattered light, and a spatial frequency spectrum of the sample surface is calculated.

摘要翻译： 在现有技术中，不考虑散射光的空间分布根据微粗糙度的差异而在各种方向如前后/侧面变化。 特别地，虽然出现在外延生长晶片上的台阶平台结构在散射光分布中产生各向异性，但是在现有技术中没有考虑到这一点。 本发明包括将光照射到样品表面的方法，在光轴方向上彼此不同的多个检测光学系统检测散射光的空间分布，并且计算样品表面的空间频谱。

公开(公告)号：US20130286191A1

公开(公告)日：2013-10-31

申请号：US13997496

申请日：2011-11-02

申请人： Masaaki Ito ,  Hidetoshi Nishimura ,  Takahiro Jingu

发明人： Masaaki Ito ,  Hidetoshi Nishimura ,  Takahiro Jingu

IPC分类号： H04N7/18

CPC分类号： H04N7/18 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a defect inspecting apparatus, the strength of a fatal defect signal decreases due to miniaturization. Thus, in order to assure a high SN ratio, it is necessary to reduce noises caused by scattered light from a wafer. Roughness of a pattern edge and surface roughness which serve as a scattered-light source are spread over the entire wafer. The present invention has discovered the fact that reduction of an illuminated area is a technique effective for decreasing noises. That is to say, the present invention has discovered the fact that creation of an illuminated area having a spot shape and reduction of the dimension of a spot beam are effective. A plurality of temporally and spatially divided spot beams are radiated to the wafer serving as a sample.

摘要翻译： 在缺陷检查装置中，致命缺陷信号的强度由于小型化而降低。 因此，为了确保高的SN比，需要减少由晶片散射的光产生的噪声。 用作散射光源的图案边缘和表面粗糙度的粗糙度分布在整个晶片上。 本发明已经发现，减少照明区域是有效降低噪声的技术。 也就是说，本发明已经发现了具有斑点形状的照明区域的创建和点光束的尺寸的减小的事实是有效的。 将多个时间上和空间上分开的光束照射到作为样品的晶片。

公开(公告)号：US20130250297A1

公开(公告)日：2013-09-26

申请号：US13990103

申请日：2011-10-11

申请人： Masaaki Ito ,  Minori Noguchi

发明人： Masaaki Ito ,  Minori Noguchi

IPC分类号： G01N21/95

CPC分类号： G01N21/9501 ,  G01N21/95607

摘要： Disclosed here is a macro inspection apparatus for a sample such as a semiconductor wafer having a pattern formed thereon, the apparatus being capable of detecting abnormalities in dimension and size with high sensitivity.The inspection apparatus for a sample having pattern formed thereon includes: an illumination optical system which illuminates the sample having the pattern formed thereon; a detection optical system which receives scattered light from the pattern; an imaging device which is disposed over a pupil plane of the detection optical system, the imaging device acquiring Fourier images of the pattern; and a processing unit which compares the Fourier images with the Fourier image of the normal pattern to detect an irregularity of the pattern.

摘要翻译： 这里公开了一种用于诸如其上形成有图案的半导体晶片的样品的宏观检查装置，该装置能够以高灵敏度检测尺寸和尺寸的异常。 用于其上形成有图案的样品的检查装置包括：照射具有形成在其上的图案的样品的照明光学系统; 检测光学系统，其接收来自图案的散射光; 成像装置，其设置在所述检测光学系统的光瞳平面上，所述成像装置获取所述图案的付里叶图像; 以及处理单元，其将傅立叶图像与正常图案的傅里叶图像进行比较，以检测图案的不规则性。

公开(公告)号：US07819159B2

公开(公告)日：2010-10-26

申请号：US11439953

申请日：2006-05-25

申请人： Masaaki Ito ,  Yukinori Nakayama ,  Tatsuharu Yamamoto ,  Hiroaki Imai

发明人： Masaaki Ito ,  Yukinori Nakayama ,  Tatsuharu Yamamoto ,  Hiroaki Imai

IPC分类号： B29C65/00 ,  B32B37/00

CPC分类号： G02F1/1341 ,  G02F1/1303 ,  G02F2001/133354 ,  G02F2001/13415 ,  G02F2202/28

摘要： A bonding apparatus, suitable for accurately bonding large substrates for a liquid crystal display, includes Z-axis drive mechanisms, and upper and lower chambers. The Z-axis drive mechanisms for moving an upper frame vertically are disposed at four corners of a mount. The upper chamber is supported by the upper frame and has an upper table inside. The lower chamber has a lower table inside and is supported on the mount. The upper and lower chambers are united through a seal ring to define a vacuum chamber. Moving the upper frame moves the upper chamber vertically to open or close the vacuum chamber. The lower table is supported via a free joint stage between the plurality of support legs and the table, and is moved horizontally by a side thrust mechanism disposed outside of the vacuum chamber.

摘要翻译： 适合于将液晶显示器的大基板精确地接合的接合装置包括Z轴驱动机构和上下室。 用于垂直移动上框架的Z轴驱动机构设置在底座的四个角处。 上部腔室由上部框架支撑，内部具有上部工作台。 下腔室内有一个较低的台面，并支撑在支架上。 上部和下部腔室通过密封环联合以限定真空室。 移动上框架使上室垂直移动以打开或关闭真空室。 下表通过多个支撑腿和台之间的自由关节台支撑，并且通过设置在真空室外部的侧推力机构水平移动。

公开(公告)号：US07746659B2

公开(公告)日：2010-06-29

申请号：US12072165

申请日：2008-02-25

申请人： Masaaki Ito

发明人： Masaaki Ito

IPC分类号： H05K1/18

CPC分类号： G02F1/13452 ,  G02F1/133385

摘要： The invention provides a heat dissipater such as a heat dissipation member that dissipates heat of an integrated circuit that is formed on a flexible substrate such as a flexible printed circuit board. The heat dissipater according to an aspect of the invention includes; a main body section that is formed in the shape of a hollow sleeve in such a manner that the flexible substrate can be inserted through and inserted inside the main body section; and an adhering section that is formed on an inner surface of the main body section in such a manner that the main body section and the integrated circuit are adhered to each other via the adhering section.

摘要翻译： 本发明提供一种散热器，例如散热构件，其散热形成在诸如柔性印刷电路板的柔性基板上的集成电路的热量。 根据本发明的一个方面的散热器包括： 主体部，其形成为中空套筒的形状，使得柔性基板能够插入并插入到主体部内; 以及粘附部，其以主体部和集成电路经由粘接部彼此粘合形成在主体部的内表面上。

公开(公告)号：US20090202138A1

公开(公告)日：2009-08-13

申请号：US12361954

申请日：2009-01-29

申请人： Masaaki Ito ,  Minori Noguchi ,  Shigeru Matsui

发明人： Masaaki Ito ,  Minori Noguchi ,  Shigeru Matsui

IPC分类号： G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/95623 ,  G01N2021/8822 ,  G06K9/74

摘要： The present invention provides an inspection apparatus having a high throughput and high sensitivity with respect to a number of various manufacturing processes and defects of interest in inspection of a specimen such as a semiconductor wafer on which a pattern is formed. The apparatus illuminates with light the specimen having the pattern formed thereon, forms an image of the specimen on an image sensor through a reflective optics, and determines the existence/nonexistence of a defect. The reflective optics has a conjugate pair of Fourier transform optics. An aberration of the reflective optics is corrected off-axis. The reflective optics has a field of view in non-straight-line slit form on the specimen surface. Also, the optics is of a reflection type, includes a conjugate pair of Fourier transform optics and has a field of view in non-straight-line slit form. An optimum wavelength band is selected according to the specimen (FIG. 1).

摘要翻译： 本发明提供了一种检测装置，其相对于在其上形成有图案的半导体晶片的样本的检查中的多种制造工艺和多个不同的制造工艺和缺陷而具有高生产率和高灵敏度。 该装置用光照射具有形成在其上的图案的样本，通过反射光学元件在图像传感器上形成样本的图像，并且确定缺陷的存在/不存在。 反射光学器件具有傅立叶变换光学器件的共轭对。 反射光学器件的像差被偏离校正。 反射光学元件在样品表面上具有非直线狭缝形式的视场。 此外，光学器件是反射型的，包括傅立叶变换光学器件的共轭对，并且具有非直线狭缝形式的视场。 根据样品选择最佳波长带（图1）。