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公开(公告)号：US5750781A
公开(公告)日：1998-05-12
申请号：US485143
申请日：1995-06-07
IPC分类号： C08F2/10 , C08F20/52 , C08F26/02 , C08F220/56 , C08F226/04 , C07C231/12
CPC分类号： C08F220/56 , C08F226/04
摘要： A process for preparing an aqueous solution of an ionic copolymer having a copolymer concentration of 20 % by weight or less and a viscosity of 20 ps or more at 25.degree. C. which comprises conducting copolymerization of an acrylamide compound(B) with a diallylamine compound(A) by continuously adding an aqueous solution of (B) having a concentration of 30% by weight or less to an aqueous solution of the diallylamine compound(A) having a concentration of 5% by weight or more and less than 10% by weight, and this process exhibit high conversion of diallylamine compounds, of which reactivity is low, and a copolymer having a high molecular weight can be obtained.
摘要翻译： 一种在25℃下制备共聚物浓度为20重量％以下且粘度为20ps以上的离子共聚物的水溶液的方法，其包括使丙烯酰胺化合物（B）与二烯丙基胺化合物 （A）通过将浓度为30重量％以下的（B）的水溶液连续添加到浓度为5重量％以上且小于10体积％的二烯丙基胺化合物（A）的水溶液中，通过 重量，并且该方法表现出高反应性的二烯丙基胺化合物的高转化率，并且可以获得具有高分子量的共聚物。
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公开(公告)号：US5521240A
公开(公告)日：1996-05-28
申请号：US473900
申请日：1995-06-07
IPC分类号： C09D179/00 , C08G12/00 , C08G73/00 , C08G73/02 , C09D179/02 , D21H19/00 , D21H19/44 , D21H19/62 , C08K5/20 , C08K5/315
CPC分类号： C09D179/02 , C08G12/00 , C08G73/022 , D21H19/62
摘要： A paper coating composition which comprises:(I) a pigment;(II) an aqueous binder;(III) a mixture or a reaction product ofa water-soluble resin (A) which can be obtained by reacting, at least, (a) an alkylenediamine or a polyalkylenepolyamine, (b) an urea compound and (c) a compound selected from aldehydes, epihalohydrins and .alpha.,.gamma.-dihalo-.beta.-hydrins; andan amide compound (B-1) which can be obtained by reacting (x) an .alpha.,.beta.-unsaturated carboxylic acid compound and (y) a primary or secondary amino compound, oran aminonitrile compound (B-2) which can be obtained by reacting (z) an .alpha.,.beta.-unsaturated nitryl compound and (y) a primary or secondary amino compound; wherein the water-soluble resin of the component (A) may be further allowed to react with a dibasic carboxylic compound, an alicyclic amine and/or an alicyclic epoxy compound in addition to the above three ingredients; andpaper coated by using the above composition is especially excellent in ink receptivity and water resistance.
摘要翻译： 一种纸涂料组合物，其包含：（I）颜料; （II）水性粘合剂; （III）可通过至少使（a）亚烷基二胺或聚亚烷基多胺反应获得的水溶性树脂（A）的混合物或反应产物，（b）脲化合物和（c）选择的化合物 来自醛，表卤代醇和α，γ-二卤代-β-氢化物; 和（x）α，β-不饱和羧酸化合物和（y）伯或仲氨基化合物或氨基腈化合物（B-2）可以得到的酰胺化合物（B-1） 通过使（z）α，β-不饱和硝基化合物和（y）伯或仲氨基化合物反应而获得; 其中除了上述三种成分之外，还可以使组分（A）的水溶性树脂与二元羧酸化合物，脂环族胺和/或脂环族环氧化合物反应; 并且通过使用上述组合物涂布的纸具有特别优异的耐油性和耐水性。
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公开(公告)号：US08212325B2
公开(公告)日：2012-07-03
申请号：US12737170
申请日：2009-06-23
IPC分类号： H01L29/84
CPC分类号： H03H3/0076 , H03H9/2473 , H03H2009/02496
摘要： An electrostatic vibrator has a vibrating plate including beam-shaped vibrating parts each fixed at opposite ends thereof and configured for electrostatic actuation to perform flexural vibration, and temperature compensation parts connected to the vibrating parts. A silicon oxide film covers each of the vibrating parts but not the temperature compensation parts. A substrate is mounted in parallel relation to the vibrating plate. An oxide layer is disposed between the substrate to the vibrating plate. Electrodes are formed on the substrate and arranged on opposite sides of each of the vibrating parts.
摘要翻译： 静电振动器具有振动板，该振动板包括各自固定在其相对两端的波形振动部件，并被构造成用于进行静电致动以进行弯曲振动，以及温度补偿部件连接到振动部件。 氧化硅膜覆盖每个振动部分，但不覆盖温度补偿部分。 基板与振动板平行地安装。 氧化层设置在基板与振动板之间。 电极形成在基板上并布置在每个振动部分的相对侧上。
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公开(公告)号：US07671710B2
公开(公告)日：2010-03-02
申请号：US12037634
申请日：2008-02-26
申请人： Yoshifumi Yoshida , Fumio Kimura
发明人： Yoshifumi Yoshida , Fumio Kimura
CPC分类号： H03B5/30
摘要： Provided is an oscillator including: a MEMS resonator for mechanically vibrating; an output oscillator circuit for oscillating at a resonance frequency of the MEMS resonator to output an oscillation signal; and a MEMS capacitor for changing a capacitance thereof caused by a change in a distance between an anode electrode and a cathode beam according to an environmental temperature.
摘要翻译： 提供了一种振荡器，包括：用于机械振动的MEMS谐振器; 用于以所述MEMS谐振器的谐振频率振荡以输出振荡信号的输出振荡器电路; 以及用于根据环境温度改变由阳极电极和阴极射线束之间的距离变化引起的电容的MEMS电容器。
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5.发明申请High voltage operating field effect transistor, and bias circuit therefor and high voltage circuit thereof 有权高电压工作场效应晶体管及其偏置电路及其高电压电路公开(公告)号：US20090014816A1
公开(公告)日：2009-01-15
申请号：US12283638
申请日：2008-09-12
IPC分类号： H01L29/78
CPC分类号： H01L29/4238
摘要： A high voltage operating field effect transistor has a substrate and a semiconductor channel formation region disposed in a surface of the substrate. A source region and a drain region are spaced apart from each other with the semiconductor channel formation region disposed between the source region and the drain region. A gate insulating film region is disposed on the semiconductor channel formation region. A resistive gate region is disposed on the gate insulating film region. A source side electrode is disposed on a source region side of the resistive gate region and is operative to receive a signal electric potential. A drain side electrode is disposed on a drain region side of the resistive gate region and is operative to receive a bias electric potential an absolute value of which is equal to or larger than that of a specified electric potential and which changes according to an increase or decrease in a drain electric potential.
摘要翻译： 高电压工作场效应晶体管具有衬底和设置在衬底的表面中的半导体沟道形成区域。 源极区域和漏极区域彼此间隔开，半导体沟道形成区域设置在源极区域和漏极区域之间。 栅极绝缘膜区域设置在半导体沟道形成区域上。 电阻栅极区域设置在栅极绝缘膜区域上。 源极电极设置在电阻栅极区域的源极区域侧并且可操作以接收信号电位。 漏极侧电极设置在电阻栅极区域的漏极侧，并且可操作以接收其绝对值等于或大于指定电位的绝对值的偏置电位，并且其根据增加或 降低漏极电位。
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公开(公告)号：US07456903B2
公开(公告)日：2008-11-25
申请号：US11242772
申请日：2005-10-04
申请人： Ikuo Osawa , Yoshifumi Yoshida , Hiroyuki Ebinuma , Toru Okada
发明人： Ikuo Osawa , Yoshifumi Yoshida , Hiroyuki Ebinuma , Toru Okada
摘要： A video signal processing circuit is supplied with an analog composite video signal formed by combining at least a luminance signal with a sync signal, and processes the analog composite video signal. The video signal processing circuit has an analog filter which removes high-frequency components from the analog composite video signal, a sync separation circuit which separates a sync signal from an output signal from the analog filter, an AD converter which performs AD conversion on the analog composite video signal, and a digital video signal processing circuit which performs predetermined video signal processing on the composite video signal digitized by the AD converter, by using the sync signal obtained by the sync separation circuit.
摘要翻译： 视频信号处理电路被提供有通过将至少亮度信号与同步信号组合而形成的模拟复合视频信号，并处理模拟复合视频信号。 视频信号处理电路具有从模拟复合视频信号中去除高频分量的模拟滤波器，将同步信号与来自模拟滤波器的输出信号分离的同步分离电路，对模拟信号进行AD转换的AD转换器 复合视频信号和数字视频信号处理电路，通过使用由同步分离电路获得的同步信号，对由AD转换器数字化的复合视频信号执行预定的视频信号处理。
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公开(公告)号：US20070102517A1
公开(公告)日：2007-05-10
申请号：US11498704
申请日：2006-08-03
IPC分类号： G06K7/00
CPC分类号： G06K19/07749 , G06K19/0701
摘要： A Provided is an electronic device in which: alternating current power from an RF coil which receives an electromagnetic wave and converts the electromagnetic wave into power is rectified by a diode and a first capacitor; the power is stepped up by a charge pump type step-up circuit; the power stepped up by the step-up circuit is stored in a second capacitor by a charging and discharging circuit; and the stored power is supplied from the charging and discharging circuit to an RF transmission circuit.
摘要翻译： A提供一种电子设备，其中：从接收电磁波并将电磁波转换成电力的RF线圈的交流电力由二极管和第一电容器整流; 功率由电荷泵式升压电路升压; 由升压电路升压的功率通过充放电电路存储在第二电容器中; 并且将存储的电力从充电和放电电路提供给RF发送电路。
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公开(公告)号：US07190032B2
公开(公告)日：2007-03-13
申请号：US11121319
申请日：2005-05-03
IPC分类号： H01L29/76
CPC分类号： H01L29/78615 , H01L21/84 , H01L27/1203
摘要： An insulated gate transistor has a semiconductor thin film having a first main surface and a second main surface, a first gate insulating film formed on the first main surface of the semiconductor thin film, a first conductive gate formed on the first gate insulating film, first and second confronting semiconductor regions of a first conductivity type insulated from the first conductive gate and disposed in contact with the semiconductor thin film, and a third semiconductor region of a second conductivity type opposite to the first conductivity type disposed in contact with the semiconductor thin film. A gate threshold voltage of the first conductive gate is controlled by a forward bias of the third semiconductor region with respect to one of the first and second semiconductor regions.
摘要翻译： 绝缘栅晶体管具有具有第一主表面和第二主表面的半导体薄膜，形成在半导体薄膜的第一主表面上的第一栅极绝缘膜，形成在第一栅极绝缘膜上的第一导电栅极，第一栅极绝缘膜 以及与第一导电栅绝缘并与半导体薄膜接触的第一导电类型的第二面对半导体区域和与半导体薄膜接触设置的与第一导电类型相反的第二导电类型的第三半导体区域 。 第一导电栅极的栅极阈值电压由第三半导体区域相对于第一和第二半导体区域之一的正向偏压来控制。
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公开(公告)号：US20060022274A1
公开(公告)日：2006-02-02
申请号：US11178744
申请日：2005-07-11
IPC分类号： H01L23/62
CPC分类号： H01L27/0266 , H01L27/0629 , H01L27/1203
摘要： Provided is a structure in which a gate electrode of an MMOS transistor of a fully depleted SOT CMOS circuit formed on a semiconductor thin film has an N-type conductivity, while a gate electrode of an protection NMOS transistor as an ESD input/output protection element formed on a semiconductor support substrate has a P-type conductivity, making it possible to protect input/output terminals, especially, an output terminal of a fully depleted SOI CMOS device, which is weak against ESD noise, while ensuring a sufficient ESD breakdown strength.
摘要翻译： 提供一种结构，其中形成在半导体薄膜上的完全耗尽的SOT CMOS电路的MMOS晶体管的栅电极具有N型导电性，而作为ESD输入/输出保护元件的保护NMOS晶体管的栅电极 在半导体支撑基板上形成的P型导电性使得有可能保护输入/输出端子，特别是对ESD噪声较弱的完全耗尽的SOI CMOS器件的输出端子，同时确保足够的ESD击穿强度 。
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公开(公告)号：US06949777B2
公开(公告)日：2005-09-27
申请号：US10410240
申请日：2003-04-09
IPC分类号： H01L27/08 , H01L21/8234 , H01L21/8238 , H01L21/84 , H01L27/088 , H01L27/092 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/78615 , H01L21/84 , H01L27/1203
摘要： An insulated gate transistor is comprised of a semiconductor thin film, a first gate insulating film formed on a main surface of the semiconductor thin film, a first conductive gate formed on the first gate insulating film, first and second confronting semiconductor regions of a first conductivity type insulated from the first conductive gate and disposed in contact with the semiconductor thin film, and a third semiconductor region of a second conductivity type opposite to the first conductivity type and disposed in contact with the semiconductor thin film. The insulated gate transistor is controlled by injecting carriers of the second conductivity type into the semiconductor thin film from the third semiconductor region, and thereafter applying a first electric potential to the first conductive gate to form a channel of the first conductivity type on a portion of the semiconductor thin film disposed between the first semiconductor region and the second semiconductor region.
摘要翻译： 绝缘栅极晶体管由半导体薄膜，形成在半导体薄膜的主表面上的第一栅极绝缘膜，形成在第一栅极绝缘膜上的第一导电栅极，第一和第二面对半导体区域构成，第一导电性 与第一导电栅极绝缘并与半导体薄膜接触并且与第一导电类型相反的第二导电类型的第三半导体区域并与半导体薄膜接触。 通过将第二导电类型的载流子从第三半导体区域注入到半导体薄膜中，然后将第一电位施加到第一导电栅极以在第一导电栅极的一部分上形成第一导电类型的沟道来控制绝缘栅晶体管 所述半导体薄膜设置在所述第一半导体区域和所述第二半导体区域之间。
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