-
公开(公告)号：US20230352623A1
公开(公告)日：2023-11-02
申请号：US18216575
申请日：2023-06-29
发明人： Zhiwei LIN , Kaixuan CHEN , Jianjiu CAI , Xiangjing ZHUO , Gang YAO , Wei CHENG
CPC分类号： H01L33/145 , H01L33/04 , H01L33/32
摘要： The present disclosure provides a semiconductor epitaxial structure and a manufacturing method therefor, and an LED chip. The semiconductor epitaxial structure may include a substrate, an N-type semiconductor layer, a gate elimination layer, an active layer and a P-type semiconductor layer are sequentially stacked on a surface of a substrate. Furthermore, the gate elimination layer comprises an N-type doped semiconductor layer.
-
公开(公告)号：US20200013760A1
公开(公告)日：2020-01-09
申请号：US16119204
申请日：2018-08-31
发明人： Zhiwei LIN , Qunxiong DENG , Kaixuan CHEN , Zhijie KE , Xiangjing ZHUO
IPC分类号： H01L25/075 , H01L33/00 , H01L33/56 , H01L33/50
摘要： A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.
-
公开(公告)号：US20200219715A1
公开(公告)日：2020-07-09
申请号：US16826160
申请日：2020-03-20
发明人： Kaixuan CHEN , Zhiwei LIN , Liyan HUO , Xiangjing ZHUO , Gang YAO , Aimin WANG
IPC分类号： H01L21/02 , H01L21/28 , H01L21/3213
摘要： Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.
-
公开(公告)号：US20200020830A1
公开(公告)日：2020-01-16
申请号：US16472187
申请日：2017-10-07
发明人： Yingce LIU , Bin SONG , Junxian LI , Qilong WU , Yang WANG , Kaixuan CHEN , Zhendong WEI , Xingen WU , Hongyi ZHOU , Lihe CAI , Xinmao HUANG , Zhiwei LIN , Yongtong LI , Qimeng LYU , Hexun CAI , Gengcheng LI
摘要： A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
-
公开(公告)号：US20190221709A1
公开(公告)日：2019-07-18
申请号：US16220264
申请日：2018-12-14
发明人： Zhiwei LIN , Kaixuan CHEN , Junxian LI , Xiangjing ZHUO , Qilong WU
摘要： A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.
-
公开(公告)号：US20240038938A1
公开(公告)日：2024-02-01
申请号：US18380139
申请日：2023-10-13
发明人： Xiaodong QU , Kaixuan CHEN , Hengping CUI , Haifang CAI , Yumei CAI , Zhiwei LIN , Kewei YANG , Bin ZHAO , Tudui JIANG , Yan LI , Minhua LI , Guilan LUO
CPC分类号： H01L33/405 , H01L33/44 , H01L33/22 , H01L33/0093
摘要： A light-emitting structure, comprising: a substrate, and a first metal layer, an insulating layer, an integrated metal layer, and an epitaxial stack, disposed above the substrate. The integrated metal layer is disposed on a surface of the second-type semiconductor layer facing away from the active region, and the integrated metal layer comprises an exposed surface on a side of the integrated metal layer facing the second-type semiconductor layer, the exposed surface being configured to electrically connect with an external driving device.
-
公开(公告)号：US20230361245A1
公开(公告)日：2023-11-09
申请号：US18219035
申请日：2023-07-06
发明人： Zhiwei LIN , Kaixuan CHEN , Jianjiu CAI , Xiangjing ZHUO , Gang YAO , Wei CHENG
摘要： The present disclosure provides a semiconductor epitaxial structure, including a substrate, a first-type semiconductor layer, an active region comprising at least one quantum layer, and a second-type semiconductor layer sequentially stacked on a surface of the substrate; wherein the quantum layer comprises barrier layers and potential well layers, and the barrier layers are alternately stacked with the potential well layers, and wherein the quantum layer further comprises a growth temperature transition layer between a barrier layer and a potential well layer, or an electron confinement layer between a barrier layer and a potential well layer.
-
公开(公告)号：US20190067525A1
公开(公告)日：2019-02-28
申请号：US16111117
申请日：2018-08-23
发明人： Zhou XU , Bo LI , Kaixuan CHEN , Yuren PENG , Guoqing ZHANG
摘要： A light-emitting diode (LED) device (e.g., AlGaInP LED) includes a transparent substrate, an epitaxial structure defining an isolation trench and an epitaxial structure, an insulating passivation layer, a P electrode and an N electrode. The epitaxial structure is disposed above the transparent substrate. The isolation trench divides the epitaxial structure into a first portion and a second portion. The at least one through hole extends through the first portion. At least a portion of the insulating passivation layer is disposed in the isolation trench. The P electrode is disposed above the first portion of the epitaxial structure and in the at least one through hole. The N electrode is disposed above the second portion of the epitaxial structure. A top surface of the P electrode is horizontally aligned with a top surface of the N electrode.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.012 秒)
