公开(公告)号：US20190067525A1

公开(公告)日：2019-02-28

申请号：US16111117

申请日：2018-08-23

申请人： Xiamen Changelight Co., Ltd.

发明人： Zhou XU ,  Bo LI ,  Kaixuan CHEN ,  Yuren PENG ,  Guoqing ZHANG

IPC分类号： H01L33/44 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/38 ,  H01L33/46 ,  H01L33/00

摘要： A light-emitting diode (LED) device (e.g., AlGaInP LED) includes a transparent substrate, an epitaxial structure defining an isolation trench and an epitaxial structure, an insulating passivation layer, a P electrode and an N electrode. The epitaxial structure is disposed above the transparent substrate. The isolation trench divides the epitaxial structure into a first portion and a second portion. The at least one through hole extends through the first portion. At least a portion of the insulating passivation layer is disposed in the isolation trench. The P electrode is disposed above the first portion of the epitaxial structure and in the at least one through hole. The N electrode is disposed above the second portion of the epitaxial structure. A top surface of the P electrode is horizontally aligned with a top surface of the N electrode.